Fabrication of heterojunction diodes comprising nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon and p-type silicon

Abdelrahman Zkria; Hiroki Gima; Sausan Al-Riyami; Tsuyoshi Yoshitake

doi:10.1557/opl.2015.315

Fabrication of heterojunction diodes comprising nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon and p-type silicon

Abdelrahman Zkria, Hiroki Gima, Sausan Al-Riyami, Tsuyoshi Yoshitake

Center for Japan-Egypt Cooperation in Science and Technology（E-JUST Center）

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited in nitrogen and hydrogen mixed gas atmospheres by coaxial arc plasma deposition (CAPD). Nitrogen-doped films with nitrogen contents of 3 and 8 at.% possessed n-type conduction. The electrical conductivity increased with increasing nitrogen content. Heterojunction diodes with p-type Si exhibited typical rectifying action. From the capacitance-voltage measurement, it was confirmed that the carrier density increases with the nitrogen content. copy; 2015 Materials Research Society.

Original language	English
Title of host publication	Diamond Electronics and Biotechnology - Fundamentals to Applications
Editors	D. A. J. Moran, G. M. Swain, C.-L. Cheng, R. J. Nemanich
Publisher	Materials Research Society
Pages	46-51
Number of pages	6
ISBN (Electronic)	9781510806153
DOIs	https://doi.org/10.1557/opl.2015.315
Publication status	Published - 2015
Event	2014 MRS Fall Meeting - Boston, United States Duration: Nov 30 2014 → Dec 5 2014

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1734
ISSN (Print)	0272-9172

Other

Other	2014 MRS Fall Meeting
Country/Territory	United States
City	Boston
Period	11/30/14 → 12/5/14

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/opl.2015.315

Cite this

Zkria, A., Gima, H., Al-Riyami, S., & Yoshitake, T. (2015). Fabrication of heterojunction diodes comprising nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon and p-type silicon. In D. A. J. Moran, G. M. Swain, C-L. Cheng, & R. J. Nemanich (Eds.), Diamond Electronics and Biotechnology - Fundamentals to Applications (pp. 46-51). (Materials Research Society Symposium Proceedings; Vol. 1734). Materials Research Society. https://doi.org/10.1557/opl.2015.315

Fabrication of heterojunction diodes comprising nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon and p-type silicon. / Zkria, Abdelrahman; Gima, Hiroki; Al-Riyami, Sausan et al.
Diamond Electronics and Biotechnology - Fundamentals to Applications. ed. / D. A. J. Moran; G. M. Swain; C.-L. Cheng; R. J. Nemanich. Materials Research Society, 2015. p. 46-51 (Materials Research Society Symposium Proceedings; Vol. 1734).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zkria, A, Gima, H, Al-Riyami, S & Yoshitake, T 2015, Fabrication of heterojunction diodes comprising nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon and p-type silicon. in DAJ Moran, GM Swain, C-L Cheng & RJ Nemanich (eds), Diamond Electronics and Biotechnology - Fundamentals to Applications. Materials Research Society Symposium Proceedings, vol. 1734, Materials Research Society, pp. 46-51, 2014 MRS Fall Meeting, Boston, United States, 11/30/14. https://doi.org/10.1557/opl.2015.315

Zkria A, Gima H, Al-Riyami S, Yoshitake T. Fabrication of heterojunction diodes comprising nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon and p-type silicon. In Moran DAJ, Swain GM, Cheng C-L, Nemanich RJ, editors, Diamond Electronics and Biotechnology - Fundamentals to Applications. Materials Research Society. 2015. p. 46-51. (Materials Research Society Symposium Proceedings). doi: 10.1557/opl.2015.315

Zkria, Abdelrahman ; Gima, Hiroki ; Al-Riyami, Sausan et al. / Fabrication of heterojunction diodes comprising nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon and p-type silicon. Diamond Electronics and Biotechnology - Fundamentals to Applications. editor / D. A. J. Moran ; G. M. Swain ; C.-L. Cheng ; R. J. Nemanich. Materials Research Society, 2015. pp. 46-51 (Materials Research Society Symposium Proceedings).

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AB - Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited in nitrogen and hydrogen mixed gas atmospheres by coaxial arc plasma deposition (CAPD). Nitrogen-doped films with nitrogen contents of 3 and 8 at.% possessed n-type conduction. The electrical conductivity increased with increasing nitrogen content. Heterojunction diodes with p-type Si exhibited typical rectifying action. From the capacitance-voltage measurement, it was confirmed that the carrier density increases with the nitrogen content. copy; 2015 Materials Research Society.

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Fabrication of heterojunction diodes comprising nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon and p-type silicon

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