TY - GEN
T1 - Fabrication of Ge-on-Insulator by Epitaxial Growth and Ion-Implanted Exfoliation for Electronics and Optoelectronics Applications
AU - Yamamoto, Keisuke
AU - Wang, Dong
AU - Nakashima, Hiroshi
N1 - Funding Information:
This work was partially supported by (JSPS) KAKENHI (grant numbers 19K15028 and 17H03237), MEXT/JSPS Leading Initiative for Excellent Young Researchers (LEADER), QR program, Kyushu University, and Cooperative Research Project Program of the Research Institute of Electrical Communication, Tohoku University.
Publisher Copyright:
© 2021 ECS-The Electrochemical Society.
PY - 2021
Y1 - 2021
N2 - Ge has been received much interest as a CMOS channel material and a near-infrared optical material due to its superior characteristics. Ge-on-Insulator (GOI) structure is necessary to suppress large leakage current originating from the narrow bandgap for application use. A method combined wafer bonding and layer splitting by hydrogen ion (H+) implantation, known as Smart-CutTM realized for Si-on-Insulator fabrication, has been tried to apply for fabricating GOI with large diameter, uniform thickness, and single crystal. In this study, we fabricated GOI by Smart-CutTM technique and demonstrated electronic and optoelectronic devices on the GOI. Besides, we combined a Ge epitaxial growth method with the Smart-CutTM technique to improve GOI quality.
AB - Ge has been received much interest as a CMOS channel material and a near-infrared optical material due to its superior characteristics. Ge-on-Insulator (GOI) structure is necessary to suppress large leakage current originating from the narrow bandgap for application use. A method combined wafer bonding and layer splitting by hydrogen ion (H+) implantation, known as Smart-CutTM realized for Si-on-Insulator fabrication, has been tried to apply for fabricating GOI with large diameter, uniform thickness, and single crystal. In this study, we fabricated GOI by Smart-CutTM technique and demonstrated electronic and optoelectronic devices on the GOI. Besides, we combined a Ge epitaxial growth method with the Smart-CutTM technique to improve GOI quality.
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U2 - 10.1149/10404.0157ecst
DO - 10.1149/10404.0157ecst
M3 - Conference contribution
AN - SCOPUS:85116940712
T3 - ECS Transactions
SP - 157
EP - 166
BT - 240th ECS Meeting - Semiconductor Process Integration 12
PB - IOP Publishing Ltd.
T2 - 240th ECS Meeting
Y2 - 10 October 2021 through 14 October 2021
ER -