Abstract
We demonstrated high current field electron emission from a gated field electron emitter fabricated by the thin film standing technique which was induced by ion-beam bombardment and etch-back technique. The thin film material was tungsten disilicide. An emitter tip having a high aspect ratio was fabricated inside a gate aperture of 2 μm in diameter. The emission current of 10 μA was obtained from a single tip cathode at the gate voltage of 133.5 V. A multitip cathode composed of 1000 tips cathode showed a lower turn-on voltage (31 V) than that of the single tip (112 V), which indicated nonuniform distribution of the turn-on voltage.
| Original language | English |
|---|---|
| Pages (from-to) | 932-935 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 24 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Mar 2006 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering
Fingerprint
Dive into the research topics of 'Fabrication of gated cold cathode using standing thin film induced by ion-beam bombardment'. Together they form a unique fingerprint.Cite this
- APA
- Standard
- Harvard
- Vancouver
- Author
- BIBTEX
- RIS