Fabrication of field emitter arrays using Si delamination by hydrogen ion implantation

Tanemasa Asano; Daisuke Sasaguri

Fabrication of field emitter arrays using Si delamination by hydrogen ion implantation

Center for Japan-Egypt Cooperation in Science and Technology（E-JUST Center）

Research output: Contribution to journal › Article › peer-review

Abstract

Field electron emitter arrays (FEAs) have been fabricated using the void cut and delamination of hydrogen ion implanted Si. The process utilizes the mold made of single-crystal Si. The delaminated Si thin film forms the gate electrode which is self-aligned to the emitter. Investigation of process conditions shows that hydrogen-ion dose, bonding between the mold Si wafer and a supporting substrate, and wafer size are critical. An FEA with 700 WSi₂ emitter tips operates by the application of voltages less than 50 V.

Original language	English
Pages (from-to)	7138-7142
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Volume	37
Issue number	12 B
Publication status	Published - 1998

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Cite this

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title = "Fabrication of field emitter arrays using Si delamination by hydrogen ion implantation",

abstract = "Field electron emitter arrays (FEAs) have been fabricated using the void cut and delamination of hydrogen ion implanted Si. The process utilizes the mold made of single-crystal Si. The delaminated Si thin film forms the gate electrode which is self-aligned to the emitter. Investigation of process conditions shows that hydrogen-ion dose, bonding between the mold Si wafer and a supporting substrate, and wafer size are critical. An FEA with 700 WSi2 emitter tips operates by the application of voltages less than 50 V.",

author = "Tanemasa Asano and Daisuke Sasaguri",

year = "1998",

language = "English",

volume = "37",

pages = "7138--7142",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "12 B",

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T1 - Fabrication of field emitter arrays using Si delamination by hydrogen ion implantation

AU - Asano, Tanemasa

AU - Sasaguri, Daisuke

PY - 1998

Y1 - 1998

N2 - Field electron emitter arrays (FEAs) have been fabricated using the void cut and delamination of hydrogen ion implanted Si. The process utilizes the mold made of single-crystal Si. The delaminated Si thin film forms the gate electrode which is self-aligned to the emitter. Investigation of process conditions shows that hydrogen-ion dose, bonding between the mold Si wafer and a supporting substrate, and wafer size are critical. An FEA with 700 WSi2 emitter tips operates by the application of voltages less than 50 V.

AB - Field electron emitter arrays (FEAs) have been fabricated using the void cut and delamination of hydrogen ion implanted Si. The process utilizes the mold made of single-crystal Si. The delaminated Si thin film forms the gate electrode which is self-aligned to the emitter. Investigation of process conditions shows that hydrogen-ion dose, bonding between the mold Si wafer and a supporting substrate, and wafer size are critical. An FEA with 700 WSi2 emitter tips operates by the application of voltages less than 50 V.

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AN - SCOPUS:19644370699

SN - 0021-4922

VL - 37

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 12 B

ER -

Fabrication of field emitter arrays using Si delamination by hydrogen ion implantation

Abstract

All Science Journal Classification (ASJC) codes

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