TY - GEN
T1 - Fabrication of bistable prestressed curved-beam
AU - Pane, Ivransa Z.
AU - Asano, Tanemasa
PY - 2007
Y1 - 2007
N2 - We have shown that prestressed curved-beam of single crystal Si can be fabricated through the sequences of the standard CMOS process using SOI. The theoritical analysis procedure for the bistable operation was established. Miniaturized bistable curved-beam will be applied to memory devices.
AB - We have shown that prestressed curved-beam of single crystal Si can be fabricated through the sequences of the standard CMOS process using SOI. The theoritical analysis procedure for the bistable operation was established. Miniaturized bistable curved-beam will be applied to memory devices.
UR - http://www.scopus.com/inward/record.url?scp=47349125279&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=47349125279&partnerID=8YFLogxK
U2 - 10.1109/IMNC.2007.4456268
DO - 10.1109/IMNC.2007.4456268
M3 - Conference contribution
AN - SCOPUS:47349125279
SN - 4990247248
SN - 9784990247249
T3 - Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC
SP - 390
EP - 391
BT - Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC
T2 - s20th International Microprocesses and Nanotechnology Conference, MNC 2007
Y2 - 5 November 2007 through 8 November 2007
ER -