Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal

Satria Zulkarnaen Bisri; Taishi Takenobu; Yohei Yomogida; Takeshi Yamao; Masayuki Yahiro; Shu Hotta; Chihaya Adachi; Yoshihiro Iwasa

doi:10.1117/12.781126

Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal

Satria Zulkarnaen Bisri, Taishi Takenobu, Yohei Yomogida, Takeshi Yamao, Masayuki Yahiro, Shu Hotta, Chihaya Adachi, Yoshihiro Iwasa

Functional Materials Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

Organic single-crystal ambipolar light-emitting transistors show a great interest due to their unique features, spectral matching with their active material spectra and the quantum efficiency preservation during ambipolar operation at high current density operation in kA/cm² order. The development of ambipolar light emitting transistor based on high photoluminescent material, α,ω-bis(biphenylyl)terthiophene (BP3T) single crystal is reported. By using bottom-gated top-contact configuration, with Ca and Au opposed metal electrodes, high value of hole and electron mobility were obtained. Extremely bright light emission observed during ambipolar operation shows prospect for electrically driven amplified spontaneous emission from organic materials.

Original language	English
Title of host publication	Organic Optoelectronics and Photonics III
DOIs	https://doi.org/10.1117/12.781126
Publication status	Published - 2008
Event	Organic Optoelectronics and Photonics III - Strasbourg, France Duration: Apr 7 2008 → Apr 10 2008

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6999
ISSN (Print)	0277-786X

Other

Other	Organic Optoelectronics and Photonics III
Country/Territory	France
City	Strasbourg
Period	4/7/08 → 4/10/08

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.781126

Cite this

Bisri, S. Z., Takenobu, T., Yomogida, Y., Yamao, T., Yahiro, M., Hotta, S., Adachi, C., & Iwasa, Y. (2008). Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal. In Organic Optoelectronics and Photonics III Article 69990Z (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6999). https://doi.org/10.1117/12.781126

Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal. / Bisri, Satria Zulkarnaen; Takenobu, Taishi; Yomogida, Yohei et al.
Organic Optoelectronics and Photonics III. 2008. 69990Z (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6999).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Bisri, SZ, Takenobu, T, Yomogida, Y, Yamao, T, Yahiro, M, Hotta, S, Adachi, C & Iwasa, Y 2008, Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal. in Organic Optoelectronics and Photonics III., 69990Z, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6999, Organic Optoelectronics and Photonics III, Strasbourg, France, 4/7/08. https://doi.org/10.1117/12.781126

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abstract = "Organic single-crystal ambipolar light-emitting transistors show a great interest due to their unique features, spectral matching with their active material spectra and the quantum efficiency preservation during ambipolar operation at high current density operation in kA/cm2 order. The development of ambipolar light emitting transistor based on high photoluminescent material, α,ω-bis(biphenylyl)terthiophene (BP3T) single crystal is reported. By using bottom-gated top-contact configuration, with Ca and Au opposed metal electrodes, high value of hole and electron mobility were obtained. Extremely bright light emission observed during ambipolar operation shows prospect for electrically driven amplified spontaneous emission from organic materials.",

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AU - Bisri, Satria Zulkarnaen

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AU - Yahiro, Masayuki

AU - Hotta, Shu

AU - Adachi, Chihaya

AU - Iwasa, Yoshihiro

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AB - Organic single-crystal ambipolar light-emitting transistors show a great interest due to their unique features, spectral matching with their active material spectra and the quantum efficiency preservation during ambipolar operation at high current density operation in kA/cm2 order. The development of ambipolar light emitting transistor based on high photoluminescent material, α,ω-bis(biphenylyl)terthiophene (BP3T) single crystal is reported. By using bottom-gated top-contact configuration, with Ca and Au opposed metal electrodes, high value of hole and electron mobility were obtained. Extremely bright light emission observed during ambipolar operation shows prospect for electrically driven amplified spontaneous emission from organic materials.

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Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal

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