Fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate

Tsuyoshi Fujimura; Akihiro Ikeda; Shin Ichi Etoh; Reiji Hattori; Yukinori Kuroki; Masanori Hidaka; Suk Sang Chang

doi:10.1109/IMNC.2003.1268531

Fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate

Tsuyoshi Fujimura, Akihiro Ikeda, Shin Ichi Etoh, Reiji Hattori, Yukinori Kuroki, Masanori Hidaka, Suk Sang Chang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper we study about the fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate.

Original language	English
Title of host publication	Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	86-87
Number of pages	2
ISBN (Electronic)	4891140402, 9784891140403
DOIs	https://doi.org/10.1109/IMNC.2003.1268531
Publication status	Published - 2003
Event	International Microprocesses and Nanotechnology Conference, MNC 2003 - Tokyo, Japan Duration: Oct 29 2003 → Oct 31 2003

Other

Other	International Microprocesses and Nanotechnology Conference, MNC 2003
Country/Territory	Japan
City	Tokyo
Period	10/29/03 → 10/31/03

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/IMNC.2003.1268531

Cite this

Fujimura, T., Ikeda, A., Etoh, S. I., Hattori, R., Kuroki, Y., Hidaka, M., & Chang, S. S. (2003). Fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate. In Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003 (pp. 86-87). Article 1268531 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2003.1268531

Fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate. / Fujimura, Tsuyoshi; Ikeda, Akihiro; Etoh, Shin Ichi et al.
Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 86-87 1268531.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fujimura, T, Ikeda, A, Etoh, SI, Hattori, R, Kuroki, Y, Hidaka, M & Chang, SS 2003, Fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate. in Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003., 1268531, Institute of Electrical and Electronics Engineers Inc., pp. 86-87, International Microprocesses and Nanotechnology Conference, MNC 2003, Tokyo, Japan, 10/29/03. https://doi.org/10.1109/IMNC.2003.1268531

Fujimura T, Ikeda A, Etoh SI, Hattori R, Kuroki Y, Hidaka M et al. Fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate. In Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 86-87. 1268531 doi: 10.1109/IMNC.2003.1268531

Fujimura, Tsuyoshi ; Ikeda, Akihiro ; Etoh, Shin Ichi et al. / Fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate. Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 86-87

@inproceedings{00762b486eb0445d842494023c0b22ad,

title = "Fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate",

abstract = "In this paper we study about the fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate.",

author = "Tsuyoshi Fujimura and Akihiro Ikeda and Etoh, {Shin Ichi} and Reiji Hattori and Yukinori Kuroki and Masanori Hidaka and Chang, {Suk Sang}",

year = "2003",

doi = "10.1109/IMNC.2003.1268531",

language = "English",

pages = "86--87",

booktitle = "Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "International Microprocesses and Nanotechnology Conference, MNC 2003 ; Conference date: 29-10-2003 Through 31-10-2003",

}

TY - GEN

T1 - Fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate

AU - Fujimura, Tsuyoshi

AU - Ikeda, Akihiro

AU - Etoh, Shin Ichi

AU - Hattori, Reiji

AU - Kuroki, Yukinori

AU - Hidaka, Masanori

AU - Chang, Suk Sang

PY - 2003

Y1 - 2003

N2 - In this paper we study about the fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate.

AB - In this paper we study about the fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate.

UR - http://www.scopus.com/inward/record.url?scp=84949196802&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84949196802&partnerID=8YFLogxK

U2 - 10.1109/IMNC.2003.1268531

DO - 10.1109/IMNC.2003.1268531

M3 - Conference contribution

AN - SCOPUS:84949196802

SP - 86

EP - 87

BT - Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Microprocesses and Nanotechnology Conference, MNC 2003

Y2 - 29 October 2003 through 31 October 2003

ER -

Fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate

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