Fabrication of a high-Q factor ring resonator using LSCVD deposited Si3N4 film

Xiaoyang Cheng, Jianxun Hong, Andrew M. Spring, Shiyoshi Yokoyama

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


High-quality silicon nitride (Si3N4) films with a low stress and optical loss weredeposited at low temperature (150°C) using liquid source chemical vapor deposition(LSCVD). The refractive index of the Si3N4 film was optimized by changing the compositionratio and deposition temperature. An integrated photonic structure of micro-ring resonatorbased on the as-deposited Si3N4 layer has been demonstrated to exemplify its viability as aphotonic integration platform. Bragg gratings are fabricated at both ends of the buswaveguide to improve coupling efficiency and testing flexibility. A measured waveguide lossof 2.9 dB/cm and a high Q-factor of 5.2 × 104 are achieved. The LSCVD deposited Si3N4 istherefore a highly promising photonic integration platform for various integrated photonicapplications.

Original languageEnglish
Pages (from-to)2182-2187
Number of pages6
JournalOptical Materials Express
Issue number7
Publication statusPublished - Jun 2 2017

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials


Dive into the research topics of 'Fabrication of a high-Q factor ring resonator using LSCVD deposited Si3N4 film'. Together they form a unique fingerprint.

Cite this