Fabrication and luminescent properties of ZnO nanowire/GaN heterojunction LEDs

Daisuke Nakamura, Yuki Ishida, Norihiro Tetsuyama, Mitsuhiro Higashihata, Tatsuo Okada

Research output: Contribution to journalArticlepeer-review


Vertically aligned ZnO nanowires were directly grown on a Mg-doped GaN substrate by nanoparticle-assisted pulsed laser deposition (NAPLD) without a catalyst. The photoluminescence of the ZnO nanowires at room temperature shows visible emission, which may be attributed to the point defects in the ZnO. A ZnO nanowire/GaN heterojunction LED was fabricated by preparing an insulating film of SOG (spin-on-glass) and electrodes. Electroluminescence at a wavelength of 500 to 900 nm was observed at room temperature under forward bias.

Original languageEnglish
Pages (from-to)715-720
Number of pages6
JournalJournal of the Illuminating Engineering Institute of Japan (Shomei Gakkai Shi)
Issue number11
Publication statusPublished - 2013

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


Dive into the research topics of 'Fabrication and luminescent properties of ZnO nanowire/GaN heterojunction LEDs'. Together they form a unique fingerprint.

Cite this