TY - JOUR
T1 - Fabrication and luminescent properties of ZnO nanowire/GaN heterojunction LEDs
AU - Nakamura, Daisuke
AU - Ishida, Yuki
AU - Tetsuyama, Norihiro
AU - Higashihata, Mitsuhiro
AU - Okada, Tatsuo
PY - 2013
Y1 - 2013
N2 - Vertically aligned ZnO nanowires were directly grown on a Mg-doped GaN substrate by nanoparticle-assisted pulsed laser deposition (NAPLD) without a catalyst. The photoluminescence of the ZnO nanowires at room temperature shows visible emission, which may be attributed to the point defects in the ZnO. A ZnO nanowire/GaN heterojunction LED was fabricated by preparing an insulating film of SOG (spin-on-glass) and electrodes. Electroluminescence at a wavelength of 500 to 900 nm was observed at room temperature under forward bias.
AB - Vertically aligned ZnO nanowires were directly grown on a Mg-doped GaN substrate by nanoparticle-assisted pulsed laser deposition (NAPLD) without a catalyst. The photoluminescence of the ZnO nanowires at room temperature shows visible emission, which may be attributed to the point defects in the ZnO. A ZnO nanowire/GaN heterojunction LED was fabricated by preparing an insulating film of SOG (spin-on-glass) and electrodes. Electroluminescence at a wavelength of 500 to 900 nm was observed at room temperature under forward bias.
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U2 - 10.2150/jieij.97.715
DO - 10.2150/jieij.97.715
M3 - Article
AN - SCOPUS:84893838191
SN - 0019-2341
VL - 97
SP - 715
EP - 720
JO - Journal of the Illuminating Engineering Institute of Japan (Shomei Gakkai Shi)
JF - Journal of the Illuminating Engineering Institute of Japan (Shomei Gakkai Shi)
IS - 11
ER -