Abstract
We have examined the fabrication conditions of epitaxial CeO2 films on a-plane sapphire substrates, and also examined epitaxial growth of YBa2Cu3O7-δ(YBCO) films on CeO 2/a-plane sapphire substrate. The θ/2θ XRD analysis of these composite films revealed that grains of the CeO2 and YBCO on CeO2/a-plane sapphire substrate were perpendicular to the substrate. From the φ-scan XRD measurement, we found that the four 102 φ-scan peaks of the YBCO film were observed and the peak positions were shifted by 45° compared with those of the CeO2 films. From the peak shifts we could estimate that the angle between the [100] axis of the CeO2 and the [100] axis of the YBCO was 45°. From temperature dependence of resistivity of the YBCO/CeO2/a-plane sapphire substrates, we obtained a zero-resistance temperature (TC) of 88.6 K. We found that their crystallinity and critical temperature (TC) were quite similar to those of YBCO film on CeO2/r-plane sapphire substrate. At the moment, YBCO thin films on a-plane sapphire are inferior to YBCO thin film on r-plane sapphire in terms of surface resistance.
| Original language | English |
|---|---|
| Pages (from-to) | 1277-1280 |
| Number of pages | 4 |
| Journal | Physica C: Superconductivity and its applications |
| Volume | 412-414 |
| Issue number | SPEC. ISS. |
| DOIs | |
| Publication status | Published - Oct 2004 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering