Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate

Research output: Contribution to conference › Paper › peer-review

Original language	English
Pages	543-544
Number of pages	2
DOIs	https://doi.org/10.7567/ssdm.2018.h-8-05
Publication status	Published - Sept 13 2018
Event	2018 International Conference on Solid State Devices and Materials (SSDM2018) - University of Tokyo, Tokyo, Japan Duration: Sept 9 2018 → Sept 13 2018

Conference	2018 International Conference on Solid State Devices and Materials (SSDM2018)
Country/Territory	Japan
City	Tokyo
Period	9/9/18 → 9/13/18

Access to Document

@conference{efaf96bea25e4dfb88587be22231d336,

title = "Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate",

author = "T. Maekura and T. Goto and K. Nakae and K. Yamamoto and H. Nakashima and D. Wang",

year = "2018",

month = sep,

day = "13",

doi = "10.7567/ssdm.2018.h-8-05",

language = "English",

pages = "543--544",

note = "2018 International Conference on Solid State Devices and Materials (SSDM2018) ; Conference date: 09-09-2018 Through 13-09-2018",

}

TY - CONF

T1 - Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate

AU - Maekura, T.

AU - Goto, T.

AU - Nakae, K.

AU - Yamamoto, K.

AU - Nakashima, H.

AU - Wang, D.

PY - 2018/9/13

Y1 - 2018/9/13

U2 - 10.7567/ssdm.2018.h-8-05

DO - 10.7567/ssdm.2018.h-8-05

M3 - Paper

SP - 543

EP - 544

T2 - 2018 International Conference on Solid State Devices and Materials (SSDM2018)

Y2 - 9 September 2018 through 13 September 2018

ER -