Fabrication and Characteristics Evaluation of CoSi2-Gate MOS Electron Tunneling Emission Cathode

Yi-Qun Zhang; Atsushi Kenjo; Taizoh[et al] Sadoh

doi:10.15017/1498420

Fabrication and Characteristics Evaluation of CoSi2-Gate MOS Electron Tunneling Emission Cathode

Yi-Qun Zhang, Atsushi Kenjo, Taizoh[et al] Sadoh

Research output: Contribution to journal › Article › peer-review

Abstract

MOS electron tunneling emission cathodes have been fabricated with CoSi_2-SiO_2-Si structures, and the emission characteristics were evaluated. The 10 - 20 nm CoSi_2 layers were formed on 10 nm SiO_2 films by the molecular beam deposition (MBD). The electron emission occurred from the gate area by electron tunneling through the potential barrier in the MOS diode. The transfer ratio, i.e., the ratio of the emission current to the total current flowing through the MOS diode, was 1.4×10^<-4>. The emission was independent of pressure in the range of 1×10^<-4> - 6×10^<-6> Torr and stable over a long period of 100 min.

Original language	English
Pages (from-to)	43-46
Number of pages	4
Journal	Research Reports on Information Science and Electrical Engineering of Kyushu University
Volume	4
Issue number	1
DOIs	https://doi.org/10.15017/1498420
Publication status	Published - Mar 26 1999
Externally published	Yes

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title = "Fabrication and Characteristics Evaluation of CoSi2-Gate MOS Electron Tunneling Emission Cathode",

abstract = "MOS electron tunneling emission cathodes have been fabricated with CoSi_2-SiO_2-Si structures, and the emission characteristics were evaluated. The 10 - 20 nm CoSi_2 layers were formed on 10 nm SiO_2 films by the molecular beam deposition (MBD). The electron emission occurred from the gate area by electron tunneling through the potential barrier in the MOS diode. The transfer ratio, i.e., the ratio of the emission current to the total current flowing through the MOS diode, was 1.4×10^<-4>. The emission was independent of pressure in the range of 1×10^<-4> - 6×10^<-6> Torr and stable over a long period of 100 min.",

author = "Yi-Qun Zhang and Atsushi Kenjo and Sadoh, {Taizoh[et al]}",

year = "1999",

month = mar,

day = "26",

doi = "10.15017/1498420",

language = "English",

volume = "4",

pages = "43--46",

journal = "Research Reports on Information Science and Electrical Engineering of Kyushu University",

issn = "1342-3819",

publisher = "Kyushu University, Faculty of Science",

number = "1",

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TY - JOUR

T1 - Fabrication and Characteristics Evaluation of CoSi2-Gate MOS Electron Tunneling Emission Cathode

AU - Zhang, Yi-Qun

AU - Kenjo, Atsushi

AU - Sadoh, Taizoh[et al]

PY - 1999/3/26

Y1 - 1999/3/26

N2 - MOS electron tunneling emission cathodes have been fabricated with CoSi_2-SiO_2-Si structures, and the emission characteristics were evaluated. The 10 - 20 nm CoSi_2 layers were formed on 10 nm SiO_2 films by the molecular beam deposition (MBD). The electron emission occurred from the gate area by electron tunneling through the potential barrier in the MOS diode. The transfer ratio, i.e., the ratio of the emission current to the total current flowing through the MOS diode, was 1.4×10^<-4>. The emission was independent of pressure in the range of 1×10^<-4> - 6×10^<-6> Torr and stable over a long period of 100 min.

AB - MOS electron tunneling emission cathodes have been fabricated with CoSi_2-SiO_2-Si structures, and the emission characteristics were evaluated. The 10 - 20 nm CoSi_2 layers were formed on 10 nm SiO_2 films by the molecular beam deposition (MBD). The electron emission occurred from the gate area by electron tunneling through the potential barrier in the MOS diode. The transfer ratio, i.e., the ratio of the emission current to the total current flowing through the MOS diode, was 1.4×10^<-4>. The emission was independent of pressure in the range of 1×10^<-4> - 6×10^<-6> Torr and stable over a long period of 100 min.

U2 - 10.15017/1498420

DO - 10.15017/1498420

M3 - Article

SN - 1342-3819

VL - 4

SP - 43

EP - 46

JO - Research Reports on Information Science and Electrical Engineering of Kyushu University

JF - Research Reports on Information Science and Electrical Engineering of Kyushu University

IS - 1

ER -

Fabrication and Characteristics Evaluation of CoSi2-Gate MOS Electron Tunneling Emission Cathode

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