TY - JOUR
T1 - Extremely low-threshold amplified spontaneous emission of 9,9′-spirobifluorene derivatives and electroluminescence from field-effect transistor structure
AU - Nakanotani, Hajime
AU - Akiyama, Seiji
AU - Ohnishi, Dai
AU - Moriwake, Masato
AU - Yahiro, Masayuki
AU - Yoshihara, Toshitada
AU - Tobita, Seiji
AU - Adachi, Chihaya
PY - 2007/9/24
Y1 - 2007/9/24
N2 - By doping 2,7-bis[4-(/V-carbazole)phenylvinyl]-9,9′-spirobifluorene (spiro-SBCz) into a wide energy gap 4,4′-bis(9-carbazole)-2,2′- biphenyl (CBP) host, we demonstrate an extremely low ASE threshold of E th = (0.11±0.05) μJ cm-2 (220 W cm-2) which is the lowest ASE threshold ever reported. In addition, we confirmed that the spiro-SBCz thin film functions as an active light emitting layer in organic light-emitting diode (OLED) and a field-effect transistor (FET). In particular, we succeeded to obtain linear electroluminescence in the FET structure which will be useful for future organic laser diodes.
AB - By doping 2,7-bis[4-(/V-carbazole)phenylvinyl]-9,9′-spirobifluorene (spiro-SBCz) into a wide energy gap 4,4′-bis(9-carbazole)-2,2′- biphenyl (CBP) host, we demonstrate an extremely low ASE threshold of E th = (0.11±0.05) μJ cm-2 (220 W cm-2) which is the lowest ASE threshold ever reported. In addition, we confirmed that the spiro-SBCz thin film functions as an active light emitting layer in organic light-emitting diode (OLED) and a field-effect transistor (FET). In particular, we succeeded to obtain linear electroluminescence in the FET structure which will be useful for future organic laser diodes.
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U2 - 10.1002/adfm.200700069
DO - 10.1002/adfm.200700069
M3 - Article
AN - SCOPUS:34948877519
SN - 1616-301X
VL - 17
SP - 2328
EP - 2335
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 14
ER -