Extremely low loss 4 x 4 GaAs/AlGaAs optical matrix switch

K. Hamamoto; S. Sugou; K. Komatsu; M. Kitamura

doi:10.1049/el:19931053

Extremely low loss 4 x 4 GaAs/AlGaAs optical matrix switch

K. Hamamoto, S. Sugou, K. Komatsu, M. Kitamura

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

A 4 x 4 GaAs/AlGaAs optical matrix switch with an extremely low loss of 1.6dB has been developed. This low loss switch was achieved by layer structure modification, to reduce free-carrier absorption, reduction of plasma damage while dry etching, and an improvement in the crystal quality.

Original language	English
Pages (from-to)	1580-1582
Number of pages	3
Journal	Electronics Letters
Volume	29
Issue number	17
DOIs	https://doi.org/10.1049/el:19931053
Publication status	Published - Aug 1993
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19931053

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@article{bae5384edbfb49eca9a4c942d448c607,

title = "Extremely low loss 4 x 4 GaAs/AlGaAs optical matrix switch",

abstract = "A 4 x 4 GaAs/AlGaAs optical matrix switch with an extremely low loss of 1.6dB has been developed. This low loss switch was achieved by layer structure modification, to reduce free-carrier absorption, reduction of plasma damage while dry etching, and an improvement in the crystal quality.",

author = "K. Hamamoto and S. Sugou and K. Komatsu and M. Kitamura",

year = "1993",

month = aug,

doi = "10.1049/el:19931053",

language = "English",

volume = "29",

pages = "1580--1582",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "17",

}

TY - JOUR

T1 - Extremely low loss 4 x 4 GaAs/AlGaAs optical matrix switch

AU - Hamamoto, K.

AU - Sugou, S.

AU - Komatsu, K.

AU - Kitamura, M.

PY - 1993/8

Y1 - 1993/8

N2 - A 4 x 4 GaAs/AlGaAs optical matrix switch with an extremely low loss of 1.6dB has been developed. This low loss switch was achieved by layer structure modification, to reduce free-carrier absorption, reduction of plasma damage while dry etching, and an improvement in the crystal quality.

AB - A 4 x 4 GaAs/AlGaAs optical matrix switch with an extremely low loss of 1.6dB has been developed. This low loss switch was achieved by layer structure modification, to reduce free-carrier absorption, reduction of plasma damage while dry etching, and an improvement in the crystal quality.

UR - http://www.scopus.com/inward/record.url?scp=0027647379&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027647379&partnerID=8YFLogxK

U2 - 10.1049/el:19931053

DO - 10.1049/el:19931053

M3 - Article

AN - SCOPUS:0027647379

SN - 0013-5194

VL - 29

SP - 1580

EP - 1582

JO - Electronics Letters

JF - Electronics Letters

IS - 17

ER -

Extremely low loss 4 x 4 GaAs/AlGaAs optical matrix switch

Abstract

All Science Journal Classification (ASJC) codes

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