TY - GEN
T1 - Extremely low bias electron emitter from electric field induced reconstructed tungsten tip
AU - Rahman, F. H.M.Faridur
AU - Khanom, Fouzia
AU - Mizuno, Seigi
AU - Tochihara, Hiroshi
PY - 2006/1/1
Y1 - 2006/1/1
N2 - This report describes a new modification technique of tungsten tip, which results a tip apex capable of emitting electrons at extremely low bias voltages. By employing positive electric field the structure of the tip apex is switched in presence of oxygen followed by freezing out the modified structure at low temperature. Thus modified tip exhibit an extraordinary two orders decrease in applied bias needed for electron emission (from 300V or 210V to as low as 0 to 4V). Electron emission shows good angular confinement with an opening angle of less than 2°.
AB - This report describes a new modification technique of tungsten tip, which results a tip apex capable of emitting electrons at extremely low bias voltages. By employing positive electric field the structure of the tip apex is switched in presence of oxygen followed by freezing out the modified structure at low temperature. Thus modified tip exhibit an extraordinary two orders decrease in applied bias needed for electron emission (from 300V or 210V to as low as 0 to 4V). Electron emission shows good angular confinement with an opening angle of less than 2°.
UR - http://www.scopus.com/inward/record.url?scp=46249124885&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=46249124885&partnerID=8YFLogxK
U2 - 10.1109/ICECE.2006.355287
DO - 10.1109/ICECE.2006.355287
M3 - Conference contribution
SN - 9843238141
SN - 9789843238146
T3 - Proceedings of 4th International Conference on Electrical and Computer Engineering, ICECE 2006
SP - 48
EP - 51
BT - Proceedings of 4th International Conference on Electrical and Computer Engineering, ICECE 2006
PB - IEEE Computer Society
T2 - 4th International Conference on Electrical and Computer Engineering, ICECE 2006
Y2 - 19 December 2006 through 21 December 2006
ER -