Experimental study of the effect of interconnects on phase noise of K-band VCO in 0.18μm CMOS technology

Baichuan Chen; Nusrat Jahan; Adel Barakat; Ramesh K. Pokharel

doi:10.1109/APMC46564.2019.9038781

Experimental study of the effect of interconnects on phase noise of K-band VCO in 0.18μm CMOS technology

Baichuan Chen, Nusrat Jahan, Adel Barakat, Ramesh K. Pokharel

Department of I&E Visionaries

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

In this paper, to characterize the effect of interconnects inductance on VCO's phase noise precisely, two K-band VCO circuits that employ DGS as an inductor are designed and analyzed. It's shown that not only the quality factor of the inductor in resonator has a significant effect on VCO's phase noise, the parasitic inductance of the interconnecting transmission lines will also inflect the phase noise severely. To get the Quantitative analysis, a K-band (25 GHz) VCO is implemented in the 0.18-mu mathrm{m} 1P6M CMOS process and measured.

Original language	English
Title of host publication	Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1670-1672
Number of pages	3
ISBN (Electronic)	9781728135175
DOIs	https://doi.org/10.1109/APMC46564.2019.9038781
Publication status	Published - Dec 2019
Event	2019 IEEE Asia-Pacific Microwave Conference, APMC 2019 - Singapore, Singapore Duration: Dec 10 2019 → Dec 13 2019

Publication series

Name	Asia-Pacific Microwave Conference Proceedings, APMC
Volume	2019-December

Conference

Conference	2019 IEEE Asia-Pacific Microwave Conference, APMC 2019
Country/Territory	Singapore
City	Singapore
Period	12/10/19 → 12/13/19

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/APMC46564.2019.9038781

Cite this

Chen, B., Jahan, N., Barakat, A., & Pokharel, R. K. (2019). Experimental study of the effect of interconnects on phase noise of K-band VCO in 0.18μm CMOS technology. In Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019 (pp. 1670-1672). Article 9038781 (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 2019-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APMC46564.2019.9038781

Experimental study of the effect of interconnects on phase noise of K-band VCO in 0.18μm CMOS technology. / Chen, Baichuan; Jahan, Nusrat; Barakat, Adel et al.
Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 1670-1672 9038781 (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 2019-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, B, Jahan, N, Barakat, A & Pokharel, RK 2019, Experimental study of the effect of interconnects on phase noise of K-band VCO in 0.18μm CMOS technology. in Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019., 9038781, Asia-Pacific Microwave Conference Proceedings, APMC, vol. 2019-December, Institute of Electrical and Electronics Engineers Inc., pp. 1670-1672, 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019, Singapore, Singapore, 12/10/19. https://doi.org/10.1109/APMC46564.2019.9038781

Chen B, Jahan N, Barakat A , Pokharel RK. Experimental study of the effect of interconnects on phase noise of K-band VCO in 0.18μm CMOS technology. In Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 1670-1672. 9038781. (Asia-Pacific Microwave Conference Proceedings, APMC). doi: 10.1109/APMC46564.2019.9038781

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title = "Experimental study of the effect of interconnects on phase noise of K-band VCO in 0.18μm CMOS technology",

abstract = "In this paper, to characterize the effect of interconnects inductance on VCO's phase noise precisely, two K-band VCO circuits that employ DGS as an inductor are designed and analyzed. It's shown that not only the quality factor of the inductor in resonator has a significant effect on VCO's phase noise, the parasitic inductance of the interconnecting transmission lines will also inflect the phase noise severely. To get the Quantitative analysis, a K-band (25 GHz) VCO is implemented in the 0.18-mu mathrm{m} 1P6M CMOS process and measured.",

author = "Baichuan Chen and Nusrat Jahan and Adel Barakat and Pokharel, {Ramesh K.}",

note = "Funding Information: This work is supported in part by a Grant-in-Aid for Scientific Research (C) (16K06301) and in part by VLSI Designand Education Center (VDEC), the University of Tokyo in collaboration with Cadence and Keysight Corporations. Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019 ; Conference date: 10-12-2019 Through 13-12-2019",

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language = "English",

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AU - Pokharel, Ramesh K.

N1 - Funding Information: This work is supported in part by a Grant-in-Aid for Scientific Research (C) (16K06301) and in part by VLSI Designand Education Center (VDEC), the University of Tokyo in collaboration with Cadence and Keysight Corporations. Publisher Copyright: © 2019 IEEE.

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N2 - In this paper, to characterize the effect of interconnects inductance on VCO's phase noise precisely, two K-band VCO circuits that employ DGS as an inductor are designed and analyzed. It's shown that not only the quality factor of the inductor in resonator has a significant effect on VCO's phase noise, the parasitic inductance of the interconnecting transmission lines will also inflect the phase noise severely. To get the Quantitative analysis, a K-band (25 GHz) VCO is implemented in the 0.18-mu mathrm{m} 1P6M CMOS process and measured.

AB - In this paper, to characterize the effect of interconnects inductance on VCO's phase noise precisely, two K-band VCO circuits that employ DGS as an inductor are designed and analyzed. It's shown that not only the quality factor of the inductor in resonator has a significant effect on VCO's phase noise, the parasitic inductance of the interconnecting transmission lines will also inflect the phase noise severely. To get the Quantitative analysis, a K-band (25 GHz) VCO is implemented in the 0.18-mu mathrm{m} 1P6M CMOS process and measured.

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Experimental study of the effect of interconnects on phase noise of K-band VCO in 0.18μm CMOS technology

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