Experimental confirmation of fundamental functions for a novel bloch line memory

Y. Hidaka; K. Matsuyama

doi:10.1109/TMAG.1983.1062792

Experimental confirmation of fundamental functions for a novel bloch line memory

Y. Hidaka, K. Matsuyama

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

In a novel Bloch line memory, vertical Bloch lines (VBL) in the stripe domain wall are used as information carriers, instead of bubble domain. Fundamental behaviors are experimentally observed on the garnet film supporting 5 μm bubble domains. Fundamental functions comprise VBL conversion to bubble domain, VBL injection into stripe domain head and VBL replication at VBL conversion to bubble domain. The VBLs are found to propagate along the stripe domain wall by using the gyrotropic force induced by wall motion.

Original language	English
Pages (from-to)	1841-1843
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	19
Issue number	5
DOIs	https://doi.org/10.1109/TMAG.1983.1062792
Publication status	Published - Sept 1983
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TMAG.1983.1062792

Cite this

@article{5a136b55dbf64118b75c365a4a8bf3e4,

title = "Experimental confirmation of fundamental functions for a novel bloch line memory",

abstract = "In a novel Bloch line memory, vertical Bloch lines (VBL) in the stripe domain wall are used as information carriers, instead of bubble domain. Fundamental behaviors are experimentally observed on the garnet film supporting 5 μm bubble domains. Fundamental functions comprise VBL conversion to bubble domain, VBL injection into stripe domain head and VBL replication at VBL conversion to bubble domain. The VBLs are found to propagate along the stripe domain wall by using the gyrotropic force induced by wall motion.",

author = "Y. Hidaka and K. Matsuyama",

year = "1983",

month = sep,

doi = "10.1109/TMAG.1983.1062792",

language = "English",

volume = "19",

pages = "1841--1843",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Experimental confirmation of fundamental functions for a novel bloch line memory

AU - Hidaka, Y.

AU - Matsuyama, K.

PY - 1983/9

Y1 - 1983/9

N2 - In a novel Bloch line memory, vertical Bloch lines (VBL) in the stripe domain wall are used as information carriers, instead of bubble domain. Fundamental behaviors are experimentally observed on the garnet film supporting 5 μm bubble domains. Fundamental functions comprise VBL conversion to bubble domain, VBL injection into stripe domain head and VBL replication at VBL conversion to bubble domain. The VBLs are found to propagate along the stripe domain wall by using the gyrotropic force induced by wall motion.

AB - In a novel Bloch line memory, vertical Bloch lines (VBL) in the stripe domain wall are used as information carriers, instead of bubble domain. Fundamental behaviors are experimentally observed on the garnet film supporting 5 μm bubble domains. Fundamental functions comprise VBL conversion to bubble domain, VBL injection into stripe domain head and VBL replication at VBL conversion to bubble domain. The VBLs are found to propagate along the stripe domain wall by using the gyrotropic force induced by wall motion.

UR - http://www.scopus.com/inward/record.url?scp=0020809892&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020809892&partnerID=8YFLogxK

U2 - 10.1109/TMAG.1983.1062792

DO - 10.1109/TMAG.1983.1062792

M3 - Article

AN - SCOPUS:0020809892

SN - 0018-9464

VL - 19

SP - 1841

EP - 1843

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 5

ER -

Experimental confirmation of fundamental functions for a novel bloch line memory

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this