Evidence for existence of deep acceptor levels in SiGe-on-insulator substrate fabricated using Ge condensation technique

Haigui Yang; Dong Wang; Hiroshi Nakashima

doi:10.1063/1.3234373

Evidence for existence of deep acceptor levels in SiGe-on-insulator substrate fabricated using Ge condensation technique

Haigui Yang, Dong Wang, Hiroshi Nakashima

Energy Engineering Sciences

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31 Citations (Scopus)

Abstract

By back-gate metal-oxide-semiconductor field-effect transistor method, we examined acceptor concentration (N_A) in nondoped SiGe-on-insulator (SGOI) substrates fabricated using Ge condensation. We found N_A's were much higher than the hole concentration (p) measured by Hall effect for low-Ge% SGOI, while N_A's were almost the same as p for high-Ge% SGOI. Such different behaviors between N_A and p as a function of Ge% are closely related to the existence of deep acceptor levels (E_TA) in SGOI and E_TA energy shift toward valence band with increasing in Ge%, which was confirmed from the temperature dependence of p.

Original language	English
Article number	122103
Journal	Applied Physics Letters
Volume	95
Issue number	12
DOIs	https://doi.org/10.1063/1.3234373
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3234373

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title = "Evidence for existence of deep acceptor levels in SiGe-on-insulator substrate fabricated using Ge condensation technique",

abstract = "By back-gate metal-oxide-semiconductor field-effect transistor method, we examined acceptor concentration (NA) in nondoped SiGe-on-insulator (SGOI) substrates fabricated using Ge condensation. We found NA's were much higher than the hole concentration (p) measured by Hall effect for low-Ge% SGOI, while NA's were almost the same as p for high-Ge% SGOI. Such different behaviors between NA and p as a function of Ge% are closely related to the existence of deep acceptor levels (ETA) in SGOI and ETA energy shift toward valence band with increasing in Ge%, which was confirmed from the temperature dependence of p.",

author = "Haigui Yang and Dong Wang and Hiroshi Nakashima",

note = "Funding Information: This study was supported in part by STARC and a Grant-in-Aid for Science Research on Priority Areas (Grant No. 20035011) from The Ministry of Education, Culture, Sports, Science and Technology of Japan.",

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T1 - Evidence for existence of deep acceptor levels in SiGe-on-insulator substrate fabricated using Ge condensation technique

AU - Yang, Haigui

AU - Wang, Dong

AU - Nakashima, Hiroshi

N1 - Funding Information: This study was supported in part by STARC and a Grant-in-Aid for Science Research on Priority Areas (Grant No. 20035011) from The Ministry of Education, Culture, Sports, Science and Technology of Japan.

PY - 2009

Y1 - 2009

N2 - By back-gate metal-oxide-semiconductor field-effect transistor method, we examined acceptor concentration (NA) in nondoped SiGe-on-insulator (SGOI) substrates fabricated using Ge condensation. We found NA's were much higher than the hole concentration (p) measured by Hall effect for low-Ge% SGOI, while NA's were almost the same as p for high-Ge% SGOI. Such different behaviors between NA and p as a function of Ge% are closely related to the existence of deep acceptor levels (ETA) in SGOI and ETA energy shift toward valence band with increasing in Ge%, which was confirmed from the temperature dependence of p.

AB - By back-gate metal-oxide-semiconductor field-effect transistor method, we examined acceptor concentration (NA) in nondoped SiGe-on-insulator (SGOI) substrates fabricated using Ge condensation. We found NA's were much higher than the hole concentration (p) measured by Hall effect for low-Ge% SGOI, while NA's were almost the same as p for high-Ge% SGOI. Such different behaviors between NA and p as a function of Ge% are closely related to the existence of deep acceptor levels (ETA) in SGOI and ETA energy shift toward valence band with increasing in Ge%, which was confirmed from the temperature dependence of p.

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Evidence for existence of deep acceptor levels in SiGe-on-insulator substrate fabricated using Ge condensation technique

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