Evaluation of test structures for the novel n+-in-p pixel and strip sensors for very high radiation environments

Y. Unno, S. Mitsui, R. Hori, Y. Ikegami, S. Terada, S. Kamada, K. Yamamura, K. Hanagaki, K. Hara, O. Jinnouchi, N. Kimura, K. Nagai, I. Nakano, S. Oda, R. Takashima, Y. Takubo, J. Tojo, K. Yorita

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


Radiation-tolerant n+-in-p silicon sensors were developed for use in very high radiation environments. Novel n+-in-p silicon strip and pixel sensors and test structures were fabricated, tested and evaluated, in order to understand the designs implemented. The resistance between the n+ implants (interstrip resistance), the electric potential of the p-stop, and the punch-through-protection (PTP) onset voltage were measured before and as a function of fluence after irradiation. The technology computer-aided design (TCAD) simulations were used to understand the radiation damage and fluence dependence of the structures. The decrease in the interstrip resistance is a consequence of increased leakage current. The decrease in the electric potential of the p-stop results from a build-up of positive charge in the silicon-silicon oxide interface. The decrease and subsequent increase in the PTP onset voltages results from the interface charge build-up and an increase in acceptor states.

Original languageEnglish
Pages (from-to)183-188
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Publication statusPublished - 2013

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation


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