Evaluation of sic­mosfet by repetitive uis tests for solid state circuit breaker

Mitsuhiko Sagara, Keiji Wada, Shin­Ichi Nishizawa

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

    Abstract

    This paper investigates a degradation of SiC power device for DC circuit breaker through repetitive unclamped inductive switching (UIS) tests. Being lower ON­resistance compared with Si devices, it has been considered an application for DC circuit breakers using SiC semiconductor. In order to use for the DC breaker, it is essential to evaluate the destructive endurance for UIS test. This paper evaluates a deterioration phenomenon by paying attention to the decrease of the gate voltage of the SiC­MOSFETs under the degradation at repetitive UIS test.

    Original languageEnglish
    Title of host publicationSilicon Carbide and Related Materials 2019
    EditorsHiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka
    PublisherTrans Tech Publications Ltd
    Pages1010-1015
    Number of pages6
    ISBN (Print)9783035715798
    DOIs
    Publication statusPublished - 2020
    Event18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 - Kyoto, Japan
    Duration: Sept 29 2019Oct 4 2019

    Publication series

    NameMaterials Science Forum
    Volume1004 MSF
    ISSN (Print)0255-5476
    ISSN (Electronic)1662-9752

    Conference

    Conference18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019
    Country/TerritoryJapan
    CityKyoto
    Period9/29/1910/4/19

    All Science Journal Classification (ASJC) codes

    • General Materials Science
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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