Evaluation of residual strain in directional solidified mono-Si ingots

Karolin Jiptner; Masayuki Fukuzawa; Yoshiji Miyamura; Hirofumi Harada; Koichi Kakimoto; Takashi Sekiguchi

doi:10.1002/pssc.201200884

Evaluation of residual strain in directional solidified mono-Si ingots

Karolin Jiptner, Masayuki Fukuzawa, Yoshiji Miyamura, Hirofumi Harada, Koichi Kakimoto, Takashi Sekiguchi

Division of Renewable Energy Dynamics

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Cast-grown mono-like Si ingots for photovoltaic application are getting increasing attention due to the possibility of obtaining highly efficient solar cells at a low-cost production process. The reduction of crystallographic defects is essential to reach that potential. In this study, the residual strain and dislocation distribution in monolike ingots grown by directional solidification was experimentally determined. It was found that both strain and dislocations are mainly concentrated in the periphery of the ingots

Original language	English
Pages (from-to)	141-145
Number of pages	5
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	10
Issue number	1
DOIs	https://doi.org/10.1002/pssc.201200884
Publication status	Published - Jan 2013

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1002/pssc.201200884

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AU - Fukuzawa, Masayuki

AU - Miyamura, Yoshiji

AU - Harada, Hirofumi

AU - Kakimoto, Koichi

AU - Sekiguchi, Takashi

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Evaluation of residual strain in directional solidified mono-Si ingots

Abstract

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