Evaluation of Hydrogen-Induced Blistering of Mo/Si Multilayers with a Capping Layer

Hiroaki Tomuro, Mengran Ji, Ryo Nagata, Koichiro Kouge, Tatsuya Yanagida, Masayuki Morita, Masahiko Andou, Yoshiyuki Honda, Kiichiro Uchino, Tsuyoshi Yoshitake

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6 Citations (Scopus)

Abstract

Mo/Si multilayer mirrors are used for extreme ultraviolet (EUV) lithography. The formation of hydrogeninduced blisters in the Mo/Si multilayer is a problem that reduces the reflectance of the mirror. To evaluate the blister-resistance of EUV mirrors, the blister formation processes of Mo/Si multilayers with a capping layer were investigated using a high-frequency hydrogen plasma system as a hydrogen ion source under varying hydrogen ion exposure conditions. As a result, it was observed that blister formation by low-energy hydrogen ion irradiation of about 10 eV increases the blister-occupied area, depending on the amount of the ion dose. Furthermore, the sample was heated to promote the diffusion of hydrogen atoms, and the activation energy of blister formation was examined using the Arrhenius plot of the ion dose required for blister formation with respect to the heating temperature.

Original languageEnglish
Article number1406005
JournalPlasma and Fusion Research
Volume17
DOIs
Publication statusPublished - 2022

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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