Eutectic solidification in hypoeutectic Al-Si alloys: Electron backscatter diffraction analysis

Nucleation and growth of the eutectic in hypoeutectic Al-Si foundry alloys has been investigated by the electron backscatter diffraction (EBSD) mapping technique using a scanning electron microscope (SEM). Sample preparation procedures for optimizing mapping have been developed. To obtain a sufficiently smooth surface from a cast Al-Si eutectic microstructure for EBSD mapping, an appropriate preparation technique by ion milling was developed and applied instead of conventional electropolishing. By comparing the orientation of the aluminum in the eutectic to that of the surrounding primary aluminum dendrites, the growth mechanism of the eutectic can be determined. Two different results were found, in isolation or sometimes together, but distinct for different strontium contents: (1) crystallographic orientations of aluminum in eutectic and surrounding primary dendrites are identical, and (2) wide variation in orientations of the aluminum in the eutectic.