TY - JOUR
T1 - Etching characteristics of SiO2 irradiated with focused ion beam
AU - Sadoh, T.
AU - Eguchi, H.
AU - Kenjo, A.
AU - Miyao, M.
N1 - Funding Information:
A part of this work was supported by the Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.
PY - 2003/5
Y1 - 2003/5
N2 - The etching characteristics of SiO2 films, which were irradiated with Si2+ focused ion beams, in a buffered HF solution were comprehensively investigated. Dependence of the etching rate on the dose was investigated. The rate increased with increasing dose (8 × 1013-1 × 1015 cm-2), however it decreased for doses exceeding a critical value (1 × 1015 cm-2). The TRIM simulation indicated that irradiation with this critical value resulted in the concentration of vacancies at the Si site equal to that of Si atoms in SiO2. These results can be explained by considering the enhancement of etching by vacancies and the retardation by implanted Si atoms. The retardation was confirmed experimentally.
AB - The etching characteristics of SiO2 films, which were irradiated with Si2+ focused ion beams, in a buffered HF solution were comprehensively investigated. Dependence of the etching rate on the dose was investigated. The rate increased with increasing dose (8 × 1013-1 × 1015 cm-2), however it decreased for doses exceeding a critical value (1 × 1015 cm-2). The TRIM simulation indicated that irradiation with this critical value resulted in the concentration of vacancies at the Si site equal to that of Si atoms in SiO2. These results can be explained by considering the enhancement of etching by vacancies and the retardation by implanted Si atoms. The retardation was confirmed experimentally.
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U2 - 10.1016/S0168-583X(03)00800-0
DO - 10.1016/S0168-583X(03)00800-0
M3 - Conference article
AN - SCOPUS:0037737599
SN - 0168-583X
VL - 206
SP - 478
EP - 481
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
T2 - 13th International conference on Ion beam modification of Mate
Y2 - 1 September 2002 through 6 September 2002
ER -