TY - JOUR
T1 - Estimation of growth rate in unidirectionally solidified multicrystalline silicon by the growth-induced striation method
AU - Bairava Ganesh, R.
AU - Matsuo, Hitoshi
AU - Kawamura, Takahiro
AU - Kangawa, Yoshihiro
AU - Arafune, Koji
AU - Ohshita, Yoshio
AU - Yamaguchi, Masafumi
AU - Kakimoto, Koichi
N1 - Funding Information:
One of the authors R. Bairava Ganesh thanks the Ministry of Education, Culture, Sports, Science and Technology, Japan, for the award of Japanese Government Scholarship through the Ministry of Human Resource and Development, India. He is also thankful to Anna University, India, for the permission to carry out this work in Japan. This work was supported by a NEDO project, a Grant-in-Aid for Scientific Research (B) 06990707-0 from the Japanese Ministry of Education, Culture, Sports, Science and Technology.
PY - 2008/5/15
Y1 - 2008/5/15
N2 - Multicrystalline silicon was grown by unidirectional solidification method using the accelerated crucible rotation technique. The application of the accelerated crucible rotation technique in unidirectional solidification method induced growth striations across the axial direction of the grown crystal. This striation pattern was observed from carbon concentration distribution, obtained by using Fourier transform infrared spectroscopy. The generated striation pattern was found to be weak and discontinuous. Some striations were absent, probably due to back melting, caused during each crucible rotation. From the growth striations and applied time period in crucible rotation, the growth rate was estimated by using Fourier transformation analysis.
AB - Multicrystalline silicon was grown by unidirectional solidification method using the accelerated crucible rotation technique. The application of the accelerated crucible rotation technique in unidirectional solidification method induced growth striations across the axial direction of the grown crystal. This striation pattern was observed from carbon concentration distribution, obtained by using Fourier transform infrared spectroscopy. The generated striation pattern was found to be weak and discontinuous. Some striations were absent, probably due to back melting, caused during each crucible rotation. From the growth striations and applied time period in crucible rotation, the growth rate was estimated by using Fourier transformation analysis.
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U2 - 10.1016/j.jcrysgro.2008.01.049
DO - 10.1016/j.jcrysgro.2008.01.049
M3 - Article
AN - SCOPUS:42749085199
SN - 0022-0248
VL - 310
SP - 2697
EP - 2701
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 11
ER -