TY - JOUR
T1 - ESR study of alkali-doped polyacenic semiconductor (PAS) materials prepared by thermal decomposition of azides
AU - Ago, H.
AU - Kuga, T.
AU - Yamabe, T.
AU - Tanaka, K.
AU - Yata, S.
AU - Hato, Y.
AU - Ando, N.
N1 - Funding Information:
Acknowledgements-This work was supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Science and Culture of Japan and by the fund of Research for the Future Program of the Japan Society for the Promotion of Science (JSPS-RFTF 96POO206).
PY - 1997
Y1 - 1997
N2 - The alkali-doped polyacenic semiconductor (PAS) materials have been prepared by thermal decomposition of alkali azides (AN3, where A = Li, Na, K and Rb) in vacuo, and their electronic properties have been studied based on the electron spin resonance (ESR) spectral measurements as functions of atomic number (Z) of the dopant metal and of temperature (T) in the range 2-300 K. From the ESR spectrum, it was confirmed that the PAS material was successfully doped by a certain amount of alkali metal. The value of ESR linewidth was found to increase with Z and to linearly decrease with decreasing T. This behavior strongly suggests that conduction electrons generated by the doping have some probability to locate on the dopant metal atom and that such a location is probably suppressed at low temperatures in a rather uniform manner irrespective of metal species.
AB - The alkali-doped polyacenic semiconductor (PAS) materials have been prepared by thermal decomposition of alkali azides (AN3, where A = Li, Na, K and Rb) in vacuo, and their electronic properties have been studied based on the electron spin resonance (ESR) spectral measurements as functions of atomic number (Z) of the dopant metal and of temperature (T) in the range 2-300 K. From the ESR spectrum, it was confirmed that the PAS material was successfully doped by a certain amount of alkali metal. The value of ESR linewidth was found to increase with Z and to linearly decrease with decreasing T. This behavior strongly suggests that conduction electrons generated by the doping have some probability to locate on the dopant metal atom and that such a location is probably suppressed at low temperatures in a rather uniform manner irrespective of metal species.
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U2 - 10.1016/S0008-6223(97)00009-2
DO - 10.1016/S0008-6223(97)00009-2
M3 - Article
AN - SCOPUS:0030644781
SN - 0008-6223
VL - 35
SP - 651
EP - 656
JO - Carbon
JF - Carbon
IS - 5
ER -