Epitaxial Yttria-stabilized Zirconia (YSZ) film deposited on Si(100) substrate by YAG laser

Satoru Kaneko; Kensuke Akiyama; Takeshi Ito; Hiroyasu Yuasa; Shinji Yasaka; Masahiko Mitsuhashi; Yoshitada Shimizu; Seishiro Ohya; Keisuke Saito; Takayuki Watanabe; Shoji Okamoto; Hiroshi Funakubo

doi:10.3131/jvsj.47.581

Epitaxial Yttria-stabilized Zirconia (YSZ) film deposited on Si(100) substrate by YAG laser

Satoru Kaneko, Kensuke Akiyama, Takeshi Ito, Hiroyasu Yuasa, Shinji Yasaka, Masahiko Mitsuhashi, Yoshitada Shimizu, Seishiro Ohya, Keisuke Saito, Takayuki Watanabe, Shoji Okamoto, Hiroshi Funakubo

Research output: Contribution to journal › Review article › peer-review

Abstract

The fourth harmonic of Q-switched YAG was used to deposit yttria-stabilized zirconia (YSZ) film on Si(100) substrate. A secondary function generator was employed to modulate Q-switch while the primary generator was synchronized with flash lamps to decrease repetition rate of laser beam. At rate of 2 Hz, beam energy increased ∼ 50% per pulse. YSZ film was deposited on Si(100) using 3 mol% YSZ sintered pellet and ∼ 9 mol% single crystal YSZ as targets. In order to improve crystallinity of YSZ, two-step deposition was also carried out; deposition in oxygen insufficient atmosphere followed by oxygen sufficient atmosphere. The full width at half maxim (FWHM) of rocking curve showed ∼1.4° for the film produced by two-step deposition on Si substrate with thin SiO₂ layer using single crystal YSZ as a target.

Original language	English
Pages (from-to)	581-584
Number of pages	4
Journal	Shinku/Journal of the Vacuum Society of Japan
Volume	47
Issue number	7
DOIs	https://doi.org/10.3131/jvsj.47.581
Publication status	Published - 2004
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.3131/jvsj.47.581

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title = "Epitaxial Yttria-stabilized Zirconia (YSZ) film deposited on Si(100) substrate by YAG laser",

abstract = "The fourth harmonic of Q-switched YAG was used to deposit yttria-stabilized zirconia (YSZ) film on Si(100) substrate. A secondary function generator was employed to modulate Q-switch while the primary generator was synchronized with flash lamps to decrease repetition rate of laser beam. At rate of 2 Hz, beam energy increased ∼ 50% per pulse. YSZ film was deposited on Si(100) using 3 mol% YSZ sintered pellet and ∼ 9 mol% single crystal YSZ as targets. In order to improve crystallinity of YSZ, two-step deposition was also carried out; deposition in oxygen insufficient atmosphere followed by oxygen sufficient atmosphere. The full width at half maxim (FWHM) of rocking curve showed ∼1.4° for the film produced by two-step deposition on Si substrate with thin SiO2 layer using single crystal YSZ as a target.",

author = "Satoru Kaneko and Kensuke Akiyama and Takeshi Ito and Hiroyasu Yuasa and Shinji Yasaka and Masahiko Mitsuhashi and Yoshitada Shimizu and Seishiro Ohya and Keisuke Saito and Takayuki Watanabe and Shoji Okamoto and Hiroshi Funakubo",

year = "2004",

doi = "10.3131/jvsj.47.581",

language = "English",

volume = "47",

pages = "581--584",

journal = "Shinku/Journal of the Vacuum Society of Japan",

issn = "0559-8516",

publisher = "Shinku Kyokai",

number = "7",

}

TY - JOUR

T1 - Epitaxial Yttria-stabilized Zirconia (YSZ) film deposited on Si(100) substrate by YAG laser

AU - Kaneko, Satoru

AU - Akiyama, Kensuke

AU - Ito, Takeshi

AU - Yuasa, Hiroyasu

AU - Yasaka, Shinji

AU - Mitsuhashi, Masahiko

AU - Shimizu, Yoshitada

AU - Ohya, Seishiro

AU - Saito, Keisuke

AU - Watanabe, Takayuki

AU - Okamoto, Shoji

AU - Funakubo, Hiroshi

PY - 2004

Y1 - 2004

N2 - The fourth harmonic of Q-switched YAG was used to deposit yttria-stabilized zirconia (YSZ) film on Si(100) substrate. A secondary function generator was employed to modulate Q-switch while the primary generator was synchronized with flash lamps to decrease repetition rate of laser beam. At rate of 2 Hz, beam energy increased ∼ 50% per pulse. YSZ film was deposited on Si(100) using 3 mol% YSZ sintered pellet and ∼ 9 mol% single crystal YSZ as targets. In order to improve crystallinity of YSZ, two-step deposition was also carried out; deposition in oxygen insufficient atmosphere followed by oxygen sufficient atmosphere. The full width at half maxim (FWHM) of rocking curve showed ∼1.4° for the film produced by two-step deposition on Si substrate with thin SiO2 layer using single crystal YSZ as a target.

AB - The fourth harmonic of Q-switched YAG was used to deposit yttria-stabilized zirconia (YSZ) film on Si(100) substrate. A secondary function generator was employed to modulate Q-switch while the primary generator was synchronized with flash lamps to decrease repetition rate of laser beam. At rate of 2 Hz, beam energy increased ∼ 50% per pulse. YSZ film was deposited on Si(100) using 3 mol% YSZ sintered pellet and ∼ 9 mol% single crystal YSZ as targets. In order to improve crystallinity of YSZ, two-step deposition was also carried out; deposition in oxygen insufficient atmosphere followed by oxygen sufficient atmosphere. The full width at half maxim (FWHM) of rocking curve showed ∼1.4° for the film produced by two-step deposition on Si substrate with thin SiO2 layer using single crystal YSZ as a target.

UR - http://www.scopus.com/inward/record.url?scp=33750804135&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750804135&partnerID=8YFLogxK

U2 - 10.3131/jvsj.47.581

DO - 10.3131/jvsj.47.581

M3 - Review article

AN - SCOPUS:33750804135

SN - 0559-8516

VL - 47

SP - 581

EP - 584

JO - Shinku/Journal of the Vacuum Society of Japan

JF - Shinku/Journal of the Vacuum Society of Japan

IS - 7

ER -

Epitaxial Yttria-stabilized Zirconia (YSZ) film deposited on Si(100) substrate by YAG laser

Abstract

All Science Journal Classification (ASJC) codes

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