Abstract
The fourth harmonic of Q-switched YAG was used to deposit yttria-stabilized zirconia (YSZ) film on Si(100) substrate. A secondary function generator was employed to modulate Q-switch while the primary generator was synchronized with flash lamps to decrease repetition rate of laser beam. At rate of 2 Hz, beam energy increased ∼ 50% per pulse. YSZ film was deposited on Si(100) using 3 mol% YSZ sintered pellet and ∼ 9 mol% single crystal YSZ as targets. In order to improve crystallinity of YSZ, two-step deposition was also carried out; deposition in oxygen insufficient atmosphere followed by oxygen sufficient atmosphere. The full width at half maxim (FWHM) of rocking curve showed ∼1.4° for the film produced by two-step deposition on Si substrate with thin SiO2 layer using single crystal YSZ as a target.
Original language | English |
---|---|
Pages (from-to) | 581-584 |
Number of pages | 4 |
Journal | Shinku/Journal of the Vacuum Society of Japan |
Volume | 47 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2004 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering