EPITAXIAL Si/INSULATOR/Si STRUCTURE PREPARED BY VACUUM DEPOSITION OF CaF//2 AND SILICON.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Materials Research Society Symposia Proceedings
Publisher	North-Holland Publ Co
Pages	145-115
Number of pages	31
ISBN (Print)	0444007741
Publication status	Published - 1982
Externally published	Yes

Name	Materials Research Society Symposia Proceedings
Volume	10
ISSN (Print)	0272-9172

All Science Journal Classification (ASJC) codes

@inproceedings{397654a467eb4a6aa1ee2f7c82c2ae67,

title = "EPITAXIAL Si/INSULATOR/Si STRUCTURE PREPARED BY VACUUM DEPOSITION OF CaF//2 AND SILICON.",

author = "T. Asano and H. Ishiwara",

year = "1982",

language = "English",

isbn = "0444007741",

series = "Materials Research Society Symposia Proceedings",

publisher = "North-Holland Publ Co",

pages = "145--115",

booktitle = "Materials Research Society Symposia Proceedings",

address = "Netherlands",

}

TY - GEN

T1 - EPITAXIAL Si/INSULATOR/Si STRUCTURE PREPARED BY VACUUM DEPOSITION OF CaF//2 AND SILICON.

AU - Asano, T.

AU - Ishiwara, H.

PY - 1982

Y1 - 1982

UR - https://www.scopus.com/pages/publications/0020305852

UR - https://www.scopus.com/pages/publications/0020305852#tab=citedBy

M3 - Conference contribution

AN - SCOPUS:0020305852

SN - 0444007741

T3 - Materials Research Society Symposia Proceedings

SP - 145

EP - 115

BT - Materials Research Society Symposia Proceedings

PB - North-Holland Publ Co

ER -