EPITAXIAL Si/INSULATOR/Si STRUCTURE PREPARED BY VACUUM DEPOSITION OF CaF//2 AND SILICON.

T. Asano, H. Ishiwara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Materials Research Society Symposia Proceedings
Publisher	North-Holland Publ Co
Pages	145-115
Number of pages	31
ISBN (Print)	0444007741
Publication status	Published - Dec 1 1982
Externally published	Yes

Name	Materials Research Society Symposia Proceedings
Volume	10
ISSN (Print)	0272-9172

All Science Journal Classification (ASJC) codes

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title = "EPITAXIAL Si/INSULATOR/Si STRUCTURE PREPARED BY VACUUM DEPOSITION OF CaF//2 AND SILICON.",

author = "T. Asano and H. Ishiwara",

year = "1982",

month = dec,

day = "1",

language = "English",

isbn = "0444007741",

series = "Materials Research Society Symposia Proceedings",

publisher = "North-Holland Publ Co",

pages = "145--115",

booktitle = "Materials Research Society Symposia Proceedings",

address = "Netherlands",

}

TY - GEN

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AU - Asano, T.

AU - Ishiwara, H.

PY - 1982/12/1

Y1 - 1982/12/1

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M3 - Conference contribution

AN - SCOPUS:0020305852

SN - 0444007741

T3 - Materials Research Society Symposia Proceedings

SP - 145

EP - 115

BT - Materials Research Society Symposia Proceedings

PB - North-Holland Publ Co

ER -