Epitaxial Pt films with different orientations grown on (100)Si substrates by RF magnetron sputtering

Epitaxial Pt films with (111) and (100) orientations were grown on Y ₂O₃-stabilized ZrO₂ (YSZ)-covered (100)Si substrates by RF sputtering. (111)Pt films were epitaxially grown on (100)YSZ//(100)Si substrates at 580 and 680°C, but competitive crystal orientations of (111) and (100) at 780°C. In contrast, a (100)-oriented epitaxial Pt film was grown at 550°C on a (100)YSZ//(100)Si substrate with a (100)-oriented epitaxial (100)Ir buffer layer. This orientational control of epitaxial Pt films enables the epitaxial growth of perovskite layers with different orientations on thermally and chemically stable Pt bottom electrodes grown on (100)Si substrates.