Epitaxial growth of ZnInON films with tunable band gap from 1.7 to 3.3 eV on ZnO templates

Koichi Matsushima, Tadafumi Hirose, Kazunari Kuwahara, Daisuke Yamashita, Giichiro Uchida, Hyunwoong Seo, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

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16 Citations (Scopus)


Epitaxial ZnInON (ZION) films with a tunable band gap have been successfully fabricated by RF magnetron sputtering on ZnO templates prepared via nitrogen mediated crystallization (NMC). X-ray diffraction (XRD) measurements show that the full widths at half maximum of the rocking curves from (002) and (101) planes are small at 0.10 and 0.08°, respectively, indicating a high crystallinity with good in-plane and out-of-plane alignments. Since the coherent growth of 35-nm-thick ZION films on NMC-ZnO templates is deduced from the reciprocal space mapping around the (105) diffraction, there is little lattice relaxation at the interface between the films and templates, which is significant in terms of the suppression of carrier recombination. The band gap of the ZION films has been tuned in a wide range of 1.7-3.3 eV by changing the Zn:In ratio. These results indicate that ZION is a potential absorption layer material of solar cells.

Original languageEnglish
Article number11NM06
JournalJapanese journal of applied physics
Issue number11 PART 2
Publication statusPublished - Nov 2013

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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