TY - JOUR
T1 - Epitaxial growth of ZnInON films with tunable band gap from 1.7 to 3.3 eV on ZnO templates
AU - Matsushima, Koichi
AU - Hirose, Tadafumi
AU - Kuwahara, Kazunari
AU - Yamashita, Daisuke
AU - Uchida, Giichiro
AU - Seo, Hyunwoong
AU - Kamataki, Kunihiro
AU - Koga, Kazunori
AU - Shiratani, Masaharu
AU - Itagaki, Naho
PY - 2013/11
Y1 - 2013/11
N2 - Epitaxial ZnInON (ZION) films with a tunable band gap have been successfully fabricated by RF magnetron sputtering on ZnO templates prepared via nitrogen mediated crystallization (NMC). X-ray diffraction (XRD) measurements show that the full widths at half maximum of the rocking curves from (002) and (101) planes are small at 0.10 and 0.08°, respectively, indicating a high crystallinity with good in-plane and out-of-plane alignments. Since the coherent growth of 35-nm-thick ZION films on NMC-ZnO templates is deduced from the reciprocal space mapping around the (105) diffraction, there is little lattice relaxation at the interface between the films and templates, which is significant in terms of the suppression of carrier recombination. The band gap of the ZION films has been tuned in a wide range of 1.7-3.3 eV by changing the Zn:In ratio. These results indicate that ZION is a potential absorption layer material of solar cells.
AB - Epitaxial ZnInON (ZION) films with a tunable band gap have been successfully fabricated by RF magnetron sputtering on ZnO templates prepared via nitrogen mediated crystallization (NMC). X-ray diffraction (XRD) measurements show that the full widths at half maximum of the rocking curves from (002) and (101) planes are small at 0.10 and 0.08°, respectively, indicating a high crystallinity with good in-plane and out-of-plane alignments. Since the coherent growth of 35-nm-thick ZION films on NMC-ZnO templates is deduced from the reciprocal space mapping around the (105) diffraction, there is little lattice relaxation at the interface between the films and templates, which is significant in terms of the suppression of carrier recombination. The band gap of the ZION films has been tuned in a wide range of 1.7-3.3 eV by changing the Zn:In ratio. These results indicate that ZION is a potential absorption layer material of solar cells.
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U2 - 10.7567/JJAP.52.11NM06
DO - 10.7567/JJAP.52.11NM06
M3 - Article
AN - SCOPUS:84888999737
SN - 0021-4922
VL - 52
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 11 PART 2
M1 - 11NM06
ER -