Epitaxial growth of poly(dimethylsilane) evaporated films on poly(tetrafluoroethylene) layer

Reiji Hattori, Yukio Aoki, Takeshi Sugano, Junji Shirafuji, Tsuyoshi Fujiki

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6 Citations (Scopus)


Epitaxially grown poly(dimethylsilane) (PDMS) films have been prepared by evaporation on a highly-oriented poly(tetrafluoroethylene) (PTFE) layer which is formed by means of a mechanical deposition technique. The orientation characteristics of PDMS films are determined using atomic force microscopy, polarizing microscope images, X-ray diffraction patterns and polarized absorption spectra. The oriented regions lie along the grooves (1-5 μm wide) formed on the PTFE layer. The X-ray diffraction patterns and the polarized absorption spectra indicate that the (110) plane of the crystal structure is parallel to the substrate surface and that the c-axis of the Si-backbone chain is parallel to the grooves on the PTFE-coated substrate.

Original languageEnglish
Pages (from-to)819-823
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number2
Publication statusPublished - 1997
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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