Epitaxial growth of ge films onto caf 2/si structures

Tanemasa Asano, Hiroshi Ishiwara

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


Heteroepitaxial Ge(insulator/Si structures have been prepared by vacuum evaporation of CaF2and Ge onto heated (111) and (100) oriented Si substrates. CaF2films with high crystalline perfection and smooth surface were formed on (111) and (lOO)Si at substrate temperatures of 800°C and 600°C, respectively. Ge films were deposited onto the CaF2/Si structures at 400°C to 600°C. Higher Ge deposition temperature resulted in increased Ge surface roughness but improved Ge crystalline quality. Both the crystalline quality and the electrical properties of the Ge films on CaF2/Si(100) structures were superior to those of the Ge films on CaF2/Si(111) structures.

Original languageEnglish
Pages (from-to)L630-L632
JournalJapanese journal of applied physics
Issue number10
Publication statusPublished - Oct 1982
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy


Dive into the research topics of 'Epitaxial growth of ge films onto caf 2/si structures'. Together they form a unique fingerprint.

Cite this