Epitaxial growth of ferromagnetic silicide Fe3Si on Si(111) substrate

Taizoh Sadoh, Hisashi Takeuchl, Koji Ueda, Atsushi Kenjo, Masanobu Miyao

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22 Citations (Scopus)


Epitaxial growth of the ferromagnetic suicide Fe3Si on Si substrates was investigated using molecular beam epitaxy. X-ray diffraction (XRD) measurements revealed that the Fe3Si phase was formed at 60-300°C, and the FeSi phase was formed at 400°C. From the results of XRD and transmission electron microscopy measurements, it was found that the Fe3Si(111) layers were epitaxially grown on Si(111) substrates, while random poly-crystal Fe3Si layers were formed on Si(100) substrates. Detailed XRD measurements showed that a small amount of DO3-type Fe 3Si was formed together with the B2-type Fe3Si. Vibrating sample magnetometer measurements revealed that Fe3Si(111) layers on Si(111) substrates have in-plane magnetic anisotropy with a period of 180°.

Original languageEnglish
Pages (from-to)3598-3600
Number of pages3
JournalJapanese Journal of Applied Physics
Issue number4 B
Publication statusPublished - Apr 25 2006

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy


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