Epitaxial growth of Al-doped β-FeSi2 on Si by ion beam synthesis

Yoshihito Maeda; Yoshikazu Terai; Masaru Itakura

doi:10.1143/JJAP.44.2502

Epitaxial growth of Al-doped β-FeSi₂ on Si by ion beam synthesis

Yoshihito Maeda, Yoshikazu Terai, Masaru Itakura

Materials Physics and Engineering

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

Ion-beam-synthesized (IBS) β-FeSi₂/Si(100) heterojunctions were observed by transmission electron microscopy (TEM) and atomic force microscopy (AFM). Clear epitaxial growth of β-FeSi₂ on Si(111) and large crystal domains laterally grown on the surface were demonstrated in Al-doped samples. The optical processes near the heterojunction were examined by photoluminescence spectra measured on the different optical configurations. The epitaxial growth due to Al doping was found to be effective in reducing the density of nonradiative recombination centers and enhancing an electron-hole injection. Solid phase epitaxy (SPE) of Si taking place at the Al-doped interface was found to be the dominant contribution to lateral growth on the surface and epitaxial growth of β-FeSi₂.

Original language	English
Pages (from-to)	2502-2505
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	44
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.44.2502
Publication status	Published - Apr 2005

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Epitaxial growth of Al-doped β-FeSi2 on Si by ion beam synthesis",

abstract = "Ion-beam-synthesized (IBS) β-FeSi2/Si(100) heterojunctions were observed by transmission electron microscopy (TEM) and atomic force microscopy (AFM). Clear epitaxial growth of β-FeSi2 on Si(111) and large crystal domains laterally grown on the surface were demonstrated in Al-doped samples. The optical processes near the heterojunction were examined by photoluminescence spectra measured on the different optical configurations. The epitaxial growth due to Al doping was found to be effective in reducing the density of nonradiative recombination centers and enhancing an electron-hole injection. Solid phase epitaxy (SPE) of Si taking place at the Al-doped interface was found to be the dominant contribution to lateral growth on the surface and epitaxial growth of β-FeSi2.",

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T1 - Epitaxial growth of Al-doped β-FeSi2 on Si by ion beam synthesis

AU - Maeda, Yoshihito

AU - Terai, Yoshikazu

AU - Itakura, Masaru

PY - 2005/4

Y1 - 2005/4

N2 - Ion-beam-synthesized (IBS) β-FeSi2/Si(100) heterojunctions were observed by transmission electron microscopy (TEM) and atomic force microscopy (AFM). Clear epitaxial growth of β-FeSi2 on Si(111) and large crystal domains laterally grown on the surface were demonstrated in Al-doped samples. The optical processes near the heterojunction were examined by photoluminescence spectra measured on the different optical configurations. The epitaxial growth due to Al doping was found to be effective in reducing the density of nonradiative recombination centers and enhancing an electron-hole injection. Solid phase epitaxy (SPE) of Si taking place at the Al-doped interface was found to be the dominant contribution to lateral growth on the surface and epitaxial growth of β-FeSi2.

AB - Ion-beam-synthesized (IBS) β-FeSi2/Si(100) heterojunctions were observed by transmission electron microscopy (TEM) and atomic force microscopy (AFM). Clear epitaxial growth of β-FeSi2 on Si(111) and large crystal domains laterally grown on the surface were demonstrated in Al-doped samples. The optical processes near the heterojunction were examined by photoluminescence spectra measured on the different optical configurations. The epitaxial growth due to Al doping was found to be effective in reducing the density of nonradiative recombination centers and enhancing an electron-hole injection. Solid phase epitaxy (SPE) of Si taking place at the Al-doped interface was found to be the dominant contribution to lateral growth on the surface and epitaxial growth of β-FeSi2.

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Epitaxial growth of Al-doped β-FeSi₂ on Si by ion beam synthesis

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