Epitaxial growth of AIN by plasma-assisted, gas-source molecular beam epitaxy

L. B. Rowland; R. S. Kern; S. Tanaka; Robert F. Davis

doi:10.1557/JMR.1993.2310

Epitaxial growth of AIN by plasma-assisted, gas-source molecular beam epitaxy

L. B. Rowland, R. S. Kern, S. Tanaka, Robert F. Davis

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

Monocrystalline AlN(0001) films with few defects were deposited on vicinal α(6H)-SiC(0001) wafers via plasma-assisted, gas-source molecular beam epitaxy within the temperature range of 1050–1200 °C The Al was thermally evaporated from an effusion cell. An electron cyclotron resonance plasma source was used to produce activated nitrogen species. Growth on vicinal Si(100) at 900–1050 °C resulted in smooth, highly oriented A1N(0001) films.

Original language	English
Pages (from-to)	2310-2314
Number of pages	5
Journal	Journal of Materials Research
Volume	8
Issue number	9
DOIs	https://doi.org/10.1557/JMR.1993.2310
Publication status	Published - Oct 1993
Externally published	Yes

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/JMR.1993.2310

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title = "Epitaxial growth of AIN by plasma-assisted, gas-source molecular beam epitaxy",

abstract = "Monocrystalline AlN(0001) films with few defects were deposited on vicinal α(6H)-SiC(0001) wafers via plasma-assisted, gas-source molecular beam epitaxy within the temperature range of 1050–1200 °C The Al was thermally evaporated from an effusion cell. An electron cyclotron resonance plasma source was used to produce activated nitrogen species. Growth on vicinal Si(100) at 900–1050 °C resulted in smooth, highly oriented A1N(0001) films.",

author = "Rowland, {L. B.} and Kern, {R. S.} and S. Tanaka and Davis, {Robert F.}",

note = "Funding Information: The authors acknowledge the support of this research by the Office of Naval Research under Grant No. N00014-90-J-1427. We also express our appreciation to Applied Science and Technology (ASTeX), Inc., Woburn, MA, for the ECR source, to Cree Research, Inc., Durham, NC, for the vicinal a(6H)-SiC substrates, and to Ms. S. Rogers for the Auger analysis.",

year = "1993",

month = oct,

doi = "10.1557/JMR.1993.2310",

language = "English",

volume = "8",

pages = "2310--2314",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Materials Research Society",

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TY - JOUR

T1 - Epitaxial growth of AIN by plasma-assisted, gas-source molecular beam epitaxy

AU - Rowland, L. B.

AU - Kern, R. S.

AU - Tanaka, S.

AU - Davis, Robert F.

N1 - Funding Information: The authors acknowledge the support of this research by the Office of Naval Research under Grant No. N00014-90-J-1427. We also express our appreciation to Applied Science and Technology (ASTeX), Inc., Woburn, MA, for the ECR source, to Cree Research, Inc., Durham, NC, for the vicinal a(6H)-SiC substrates, and to Ms. S. Rogers for the Auger analysis.

PY - 1993/10

Y1 - 1993/10

N2 - Monocrystalline AlN(0001) films with few defects were deposited on vicinal α(6H)-SiC(0001) wafers via plasma-assisted, gas-source molecular beam epitaxy within the temperature range of 1050–1200 °C The Al was thermally evaporated from an effusion cell. An electron cyclotron resonance plasma source was used to produce activated nitrogen species. Growth on vicinal Si(100) at 900–1050 °C resulted in smooth, highly oriented A1N(0001) films.

AB - Monocrystalline AlN(0001) films with few defects were deposited on vicinal α(6H)-SiC(0001) wafers via plasma-assisted, gas-source molecular beam epitaxy within the temperature range of 1050–1200 °C The Al was thermally evaporated from an effusion cell. An electron cyclotron resonance plasma source was used to produce activated nitrogen species. Growth on vicinal Si(100) at 900–1050 °C resulted in smooth, highly oriented A1N(0001) films.

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DO - 10.1557/JMR.1993.2310

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Epitaxial growth of AIN by plasma-assisted, gas-source molecular beam epitaxy

Abstract

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