TY - JOUR
T1 - Epitaxial growth of a full-Heusler alloy Co2FeSi on silicon by low-temperature molecular beam epitaxy
AU - Yamada, S.
AU - Yamamoto, K.
AU - Ueda, K.
AU - Ando, Y.
AU - Hamaya, K.
AU - Sadoh, T.
AU - Miyao, M.
N1 - Funding Information:
The authors thank Prof. Y. Maeda of Kyoto University for useful discussion and experimental supports. This work was partly supported by a Grant-in-Aid for Scientific Research on Priority Area (No. 18063018) from the Ministry of Education, Culture, Sports, Science, and Technology in Japan , PRESTO, Japan Science and Technology Agency , and Iketani Science and Technology Foundation .
PY - 2010/1/1
Y1 - 2010/1/1
N2 - For electrical spin injection and detection of spin-polarized electrons in silicon, we explore highly epitaxial growth of ferromagnetic full-Heusler-alloy Co2FeSi on silicon substrates using low-temperature molecular beam epitaxy (LT-MBE). Although in-situ reflection high energy electron diffraction images clearly show two-dimensional epitaxial growth for growth temperatures (TG) of 60, 130, and 200 °C, cross-sectional transmission electron microscopy experiments reveal that there are single-crystal phases other than Heusler alloys near the interface between Co2FeSi and Si for TG = 130 and 200 °C. On the other hand, almost perfect heterointerfaces are achieved for TG = 60 °C. These results and magnetic measurements indicate that highly epitaxial growth of Co2FeSi thin films on Si is demonstrated only for TG = 60 °C.
AB - For electrical spin injection and detection of spin-polarized electrons in silicon, we explore highly epitaxial growth of ferromagnetic full-Heusler-alloy Co2FeSi on silicon substrates using low-temperature molecular beam epitaxy (LT-MBE). Although in-situ reflection high energy electron diffraction images clearly show two-dimensional epitaxial growth for growth temperatures (TG) of 60, 130, and 200 °C, cross-sectional transmission electron microscopy experiments reveal that there are single-crystal phases other than Heusler alloys near the interface between Co2FeSi and Si for TG = 130 and 200 °C. On the other hand, almost perfect heterointerfaces are achieved for TG = 60 °C. These results and magnetic measurements indicate that highly epitaxial growth of Co2FeSi thin films on Si is demonstrated only for TG = 60 °C.
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U2 - 10.1016/j.tsf.2009.10.107
DO - 10.1016/j.tsf.2009.10.107
M3 - Article
AN - SCOPUS:73649146221
SN - 0040-6090
VL - 518
SP - S278-S280
JO - Thin Solid Films
JF - Thin Solid Films
IS - 6 SUPPL. 1
ER -