Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD

Peipei Zhu; Meijun Yang; Qingfang Xu; Qingyun Sun; Rong Tu; Jun Li; Song Zhang; Qizhong Li; Lianmeng Zhang; Takashi Goto; Ji Shi; Haiwen Li; Hitoshi Ohmori; Marina Kosinova; Bikramjit Basu

doi:10.1111/jace.15557

Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD

Peipei Zhu
, Meijun Yang
, Qingfang Xu
, Qingyun Sun
, Rong Tu
, Jun Li
, Song Zhang
, Qizhong Li
, Lianmeng Zhang
, Takashi Goto
, Ji Shi
, Haiwen Li
, Hitoshi Ohmori
, Marina Kosinova
, Bikramjit Basu

Kyushu University Platform of Inter/Transdisciplinary Energy Research

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Epitaxial 3C–SiC films have been deposited on Si(111) and Si(001) substrates via laser CVD with deposition rate of 12.32 and 15.56 μm/h, respectively. The activation energy of 3C–SiC on Si(111) and Si(001) was 80 and 160 kJ/mol, and the root mean square (RMS) roughness (w) as a function of the film thickness (h) follows power laws of w~h^0.31 and w~h^0.06, respectively. The growth mechanisms of epitaxial 3C–SiC films on Si(111) and Si(001) was investigated based on the structural analysis and roughness evolution.

Original language	English
Pages (from-to)	3850-3856
Number of pages	7
Journal	Journal of the American Ceramic Society
Volume	101
Issue number	9
DOIs	https://doi.org/10.1111/jace.15557
Publication status	Published - Sept 2018

All Science Journal Classification (ASJC) codes

Ceramics and Composites
Materials Chemistry

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10.1111/jace.15557

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title = "Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD",

abstract = "Epitaxial 3C–SiC films have been deposited on Si(111) and Si(001) substrates via laser CVD with deposition rate of 12.32 and 15.56 μm/h, respectively. The activation energy of 3C–SiC on Si(111) and Si(001) was 80 and 160 kJ/mol, and the root mean square (RMS) roughness (w) as a function of the film thickness (h) follows power laws of w\textasciitilde{}h0.31 and w\textasciitilde{}h0.06, respectively. The growth mechanisms of epitaxial 3C–SiC films on Si(111) and Si(001) was investigated based on the structural analysis and roughness evolution.",

keywords = "3C–SiC, epitaxial growth, laser chemical vapor deposition, microstructure",

author = "Peipei Zhu and Meijun Yang and Qingfang Xu and Qingyun Sun and Rong Tu and Jun Li and Song Zhang and Qizhong Li and Lianmeng Zhang and Takashi Goto and Ji Shi and Haiwen Li and Hitoshi Ohmori and Marina Kosinova and Bikramjit Basu",

note = "Publisher Copyright: {\textcopyright} 2018 The American Ceramic Society",

year = "2018",

month = sep,

doi = "10.1111/jace.15557",

language = "English",

volume = "101",

pages = "3850--3856",

journal = "Journal of the American Ceramic Society",

issn = "0002-7820",

publisher = "Wiley-Blackwell",

number = "9",

}

TY - JOUR

T1 - Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD

AU - Zhu, Peipei

AU - Yang, Meijun

AU - Xu, Qingfang

AU - Sun, Qingyun

AU - Tu, Rong

AU - Li, Jun

AU - Zhang, Song

AU - Li, Qizhong

AU - Zhang, Lianmeng

AU - Goto, Takashi

AU - Shi, Ji

AU - Li, Haiwen

AU - Ohmori, Hitoshi

AU - Kosinova, Marina

AU - Basu, Bikramjit

PY - 2018/9

Y1 - 2018/9

N2 - Epitaxial 3C–SiC films have been deposited on Si(111) and Si(001) substrates via laser CVD with deposition rate of 12.32 and 15.56 μm/h, respectively. The activation energy of 3C–SiC on Si(111) and Si(001) was 80 and 160 kJ/mol, and the root mean square (RMS) roughness (w) as a function of the film thickness (h) follows power laws of w~h0.31 and w~h0.06, respectively. The growth mechanisms of epitaxial 3C–SiC films on Si(111) and Si(001) was investigated based on the structural analysis and roughness evolution.

AB - Epitaxial 3C–SiC films have been deposited on Si(111) and Si(001) substrates via laser CVD with deposition rate of 12.32 and 15.56 μm/h, respectively. The activation energy of 3C–SiC on Si(111) and Si(001) was 80 and 160 kJ/mol, and the root mean square (RMS) roughness (w) as a function of the film thickness (h) follows power laws of w~h0.31 and w~h0.06, respectively. The growth mechanisms of epitaxial 3C–SiC films on Si(111) and Si(001) was investigated based on the structural analysis and roughness evolution.

KW - 3C–SiC

KW - epitaxial growth

KW - laser chemical vapor deposition

KW - microstructure

UR - https://www.scopus.com/pages/publications/85045741345

UR - https://www.scopus.com/pages/publications/85045741345#tab=citedBy

U2 - 10.1111/jace.15557

DO - 10.1111/jace.15557

M3 - Article

AN - SCOPUS:85045741345

SN - 0002-7820

VL - 101

SP - 3850

EP - 3856

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

IS - 9

ER -

Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD

Abstract

All Science Journal Classification (ASJC) codes

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