TY - JOUR
T1 - Epitaxial growth of 3C-SiC (111) on Si via laser CVD carbonization
AU - Tu, Rong
AU - Hu, Zhiying
AU - Xu, Qingfang
AU - Li, Lin
AU - Yang, Meijun
AU - Li, Qizhong
AU - Shi, Ji
AU - Li, Haiwen
AU - Zhang, Song
AU - Zhang, Lianmeng
AU - Goto, Takashi
AU - Ohmori, Hitoshi
AU - Kosinova, Marina
AU - Basu, Bikramjit
N1 - Funding Information:
This work was supported by the Joint Fund of the Ministry of Education for Pre-research of Equipment (6141A02022257), the Science Challenge Project (No. TZ2016001), the National Natural Science Foundation of China (Nos. 51372188, 11602251, 51861145306 and 51872212), and the 111 Project (B13035). It was also supported by the International Science & Technology Cooperation Program of China (2014DFA53090, 2018YFE0103600), the Natural Science Foundation of Hubei Province, China (2016CFA006), the Fundamental Research Funds for the Central Universities (WUT: 2018YS003, 2018YS016, 2019III030, 2019III028), and the State Key Laboratory of Advanced Technology for Materials Synthesis and Processing (WUT, Grant No. 2019-KF-12).
Publisher Copyright:
© 2019, © 2019 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group on behalf of The Korean Ceramic Society and The Ceramic Society of Japan.
PY - 2019/1/1
Y1 - 2019/1/1
N2 - A qualitative and quantitative study was performed on the carbonization temperature (TC) and carbonization time (tC) with respect to the microstructure and growth rate (Rg) of a 3C-SiC epitaxial layer on Si (111) substrates by carbonization via laser chemical vapor deposition (LCVD). The results showed that the density and size of the voids depended strongly on TC. The voids were sealed, and thin films were formed continuously and uniformly after a carbonization time of 6 min at TC = 1200 °C. Rg was also dependent on TC, and increased from 0.43 to 1.35μm·h−1 with increases in TC from 1000 to 1200 °C. These deposition rates are 10 to 100 times greater than those of observed for conventional CVD methods.
AB - A qualitative and quantitative study was performed on the carbonization temperature (TC) and carbonization time (tC) with respect to the microstructure and growth rate (Rg) of a 3C-SiC epitaxial layer on Si (111) substrates by carbonization via laser chemical vapor deposition (LCVD). The results showed that the density and size of the voids depended strongly on TC. The voids were sealed, and thin films were formed continuously and uniformly after a carbonization time of 6 min at TC = 1200 °C. Rg was also dependent on TC, and increased from 0.43 to 1.35μm·h−1 with increases in TC from 1000 to 1200 °C. These deposition rates are 10 to 100 times greater than those of observed for conventional CVD methods.
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U2 - 10.1080/21870764.2019.1631995
DO - 10.1080/21870764.2019.1631995
M3 - Article
AN - SCOPUS:85067671193
SN - 2187-0764
VL - 7
SP - 312
EP - 320
JO - Journal of Asian Ceramic Societies
JF - Journal of Asian Ceramic Societies
IS - 3
ER -