Epitaxial ferromagnetic Fe3Si/Si(111) structures with high-quality heterointerfaces

K. Hamaya; K. Ueda; Y. Kishi; Y. Ando; T. Sadoh; M. Miyao

doi:10.1063/1.2996581

Epitaxial ferromagnetic Fe₃Si/Si(111) structures with high-quality heterointerfaces

K. Hamaya, K. Ueda, Y. Kishi, Y. Ando, T. Sadoh, M. Miyao

Electronic Devices

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94 Citations (Scopus)

Abstract

To develop silicon-based spintronic devices, we have explored high-quality ferromagnetic _Fe3 Si /silicon (Si) structures. Using low-temperature molecular beam epitaxy at 130 °C, we realize the epitaxial growth of ferromagnetic _Fe3 Si layers on Si(111) with an abrupt interface, and the grown _Fe3 Si layer has the ordered D _O3 phase. Measurements of magnetic and electrical properties for the _Fe3 SiSi (111) yield a magnetic moment of ∼3.16 _μB f.u. at room temperature and a rectifying Schottky-diode behavior with the ideality factor of ∼1.08, respectively.

Original language	English
Article number	132117
Journal	Applied Physics Letters
Volume	93
Issue number	13
DOIs	https://doi.org/10.1063/1.2996581
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2996581

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title = "Epitaxial ferromagnetic Fe3Si/Si(111) structures with high-quality heterointerfaces",

abstract = "To develop silicon-based spintronic devices, we have explored high-quality ferromagnetic Fe3 Si /silicon (Si) structures. Using low-temperature molecular beam epitaxy at 130 °C, we realize the epitaxial growth of ferromagnetic Fe3 Si layers on Si(111) with an abrupt interface, and the grown Fe3 Si layer has the ordered D O3 phase. Measurements of magnetic and electrical properties for the Fe3 SiSi (111) yield a magnetic moment of ∼3.16 μB f.u. at room temperature and a rectifying Schottky-diode behavior with the ideality factor of ∼1.08, respectively.",

author = "K. Hamaya and K. Ueda and Y. Kishi and Y. Ando and T. Sadoh and M. Miyao",

note = "Funding Information: The authors thank Professor Y. Maeda of Kyoto University and Professor K. Matsuyama and Professor Y. Nozaki of Kyushu University for useful discussions. K.U. and Y.A. acknowledge support from the JSPS Research Program for Young Scientists. This work was partly supported by a Grant-in-Aid for Scientific Research on Priority Area (No. 18063018) from the Ministry of Education, Culture, Sports, Science, and Technology in Japan.",

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TY - JOUR

T1 - Epitaxial ferromagnetic Fe3Si/Si(111) structures with high-quality heterointerfaces

AU - Hamaya, K.

AU - Ueda, K.

AU - Kishi, Y.

AU - Ando, Y.

AU - Sadoh, T.

AU - Miyao, M.

N1 - Funding Information: The authors thank Professor Y. Maeda of Kyoto University and Professor K. Matsuyama and Professor Y. Nozaki of Kyushu University for useful discussions. K.U. and Y.A. acknowledge support from the JSPS Research Program for Young Scientists. This work was partly supported by a Grant-in-Aid for Scientific Research on Priority Area (No. 18063018) from the Ministry of Education, Culture, Sports, Science, and Technology in Japan.

PY - 2008

Y1 - 2008

N2 - To develop silicon-based spintronic devices, we have explored high-quality ferromagnetic Fe3 Si /silicon (Si) structures. Using low-temperature molecular beam epitaxy at 130 °C, we realize the epitaxial growth of ferromagnetic Fe3 Si layers on Si(111) with an abrupt interface, and the grown Fe3 Si layer has the ordered D O3 phase. Measurements of magnetic and electrical properties for the Fe3 SiSi (111) yield a magnetic moment of ∼3.16 μB f.u. at room temperature and a rectifying Schottky-diode behavior with the ideality factor of ∼1.08, respectively.

AB - To develop silicon-based spintronic devices, we have explored high-quality ferromagnetic Fe3 Si /silicon (Si) structures. Using low-temperature molecular beam epitaxy at 130 °C, we realize the epitaxial growth of ferromagnetic Fe3 Si layers on Si(111) with an abrupt interface, and the grown Fe3 Si layer has the ordered D O3 phase. Measurements of magnetic and electrical properties for the Fe3 SiSi (111) yield a magnetic moment of ∼3.16 μB f.u. at room temperature and a rectifying Schottky-diode behavior with the ideality factor of ∼1.08, respectively.

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JF - Applied Physics Letters

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Epitaxial ferromagnetic Fe₃Si/Si(111) structures with high-quality heterointerfaces

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