Enlargement of SiC single crystal: Enhancement of lateral growth using tapered graphite lid

Wook Bahng, Yasuo Kitou, Shin Ichi Nishizawa, Hirotaka Yamaguchi, Muhammad Nasir Khan, Naoki Oyanagi, Kazuo Arai, Shigehiro Nishino

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)


We investigated the rapid enlargement of SiC single crystal during physical vapor transport growth by enhancing the lateral growth. The degrees of enlargement of the single crystals grown on the newly developed graphite lid were larger than those of crystals grown on the conventional one. Using a cone-shaped platform, the polycrystals grown around the single crystal could assist the lateral growth of single crystal. There was no significant difference between the central region and the enlarged region as far as the micropipe density was considered. The dependence of the broadening angle (β) of the single crystal on the taper angle (θ) of the cone-shaped platform was also investigated and an optimum angle at a given growth condition was found.

Original languageEnglish
Pages (from-to)I/-
JournalMaterials Science Forum
Publication statusPublished - 2000
Externally publishedYes
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Enlargement of SiC single crystal: Enhancement of lateral growth using tapered graphite lid'. Together they form a unique fingerprint.

Cite this