Enlargement of SiC single crystal: Enhancement of lateral growth using tapered graphite lid

Wook Bahng; Yasuo Kitou; Shin Ichi Nishizawa; Hirotaka Yamaguchi; Muhammad Nasir Khan; Naoki Oyanagi; Kazuo Arai; Shigehiro Nishino

Enlargement of SiC single crystal: Enhancement of lateral growth using tapered graphite lid

Wook Bahng, Yasuo Kitou, Shin Ichi Nishizawa, Hirotaka Yamaguchi, Muhammad Nasir Khan, Naoki Oyanagi, Kazuo Arai, Shigehiro Nishino

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

We investigated the rapid enlargement of SiC single crystal during physical vapor transport growth by enhancing the lateral growth. The degrees of enlargement of the single crystals grown on the newly developed graphite lid were larger than those of crystals grown on the conventional one. Using a cone-shaped platform, the polycrystals grown around the single crystal could assist the lateral growth of single crystal. There was no significant difference between the central region and the enlarged region as far as the micropipe density was considered. The dependence of the broadening angle (β) of the single crystal on the taper angle (θ) of the cone-shaped platform was also investigated and an optimum angle at a given growth condition was found.

Original language	English
Pages (from-to)	I/-
Journal	Materials Science Forum
Volume	338
Publication status	Published - 2000
Externally published	Yes
Event	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: Oct 10 1999 → Oct 15 1999

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Enlargement of SiC single crystal: Enhancement of lateral growth using tapered graphite lid",

abstract = "We investigated the rapid enlargement of SiC single crystal during physical vapor transport growth by enhancing the lateral growth. The degrees of enlargement of the single crystals grown on the newly developed graphite lid were larger than those of crystals grown on the conventional one. Using a cone-shaped platform, the polycrystals grown around the single crystal could assist the lateral growth of single crystal. There was no significant difference between the central region and the enlarged region as far as the micropipe density was considered. The dependence of the broadening angle (β) of the single crystal on the taper angle (θ) of the cone-shaped platform was also investigated and an optimum angle at a given growth condition was found.",

author = "Wook Bahng and Yasuo Kitou and Nishizawa, {Shin Ichi} and Hirotaka Yamaguchi and Khan, {Muhammad Nasir} and Naoki Oyanagi and Kazuo Arai and Shigehiro Nishino",

note = "Copyright: Copyright 2005 Elsevier Science B.V., Amsterdam. All rights reserved.; ICSCRM '99: The International Conference on Silicon Carbide and Related Materials ; Conference date: 10-10-1999 Through 15-10-1999",

year = "2000",

language = "English",

volume = "338",

pages = "I/--",

journal = "Materials Science Forum",

issn = "0255-5476",

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TY - JOUR

T1 - Enlargement of SiC single crystal

T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials

AU - Bahng, Wook

AU - Kitou, Yasuo

AU - Nishizawa, Shin Ichi

AU - Yamaguchi, Hirotaka

AU - Khan, Muhammad Nasir

AU - Oyanagi, Naoki

AU - Arai, Kazuo

AU - Nishino, Shigehiro

PY - 2000

Y1 - 2000

N2 - We investigated the rapid enlargement of SiC single crystal during physical vapor transport growth by enhancing the lateral growth. The degrees of enlargement of the single crystals grown on the newly developed graphite lid were larger than those of crystals grown on the conventional one. Using a cone-shaped platform, the polycrystals grown around the single crystal could assist the lateral growth of single crystal. There was no significant difference between the central region and the enlarged region as far as the micropipe density was considered. The dependence of the broadening angle (β) of the single crystal on the taper angle (θ) of the cone-shaped platform was also investigated and an optimum angle at a given growth condition was found.

AB - We investigated the rapid enlargement of SiC single crystal during physical vapor transport growth by enhancing the lateral growth. The degrees of enlargement of the single crystals grown on the newly developed graphite lid were larger than those of crystals grown on the conventional one. Using a cone-shaped platform, the polycrystals grown around the single crystal could assist the lateral growth of single crystal. There was no significant difference between the central region and the enlarged region as far as the micropipe density was considered. The dependence of the broadening angle (β) of the single crystal on the taper angle (θ) of the cone-shaped platform was also investigated and an optimum angle at a given growth condition was found.

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M3 - Conference article

AN - SCOPUS:12944317285

SN - 0255-5476

VL - 338

SP - I/-

JO - Materials Science Forum

JF - Materials Science Forum

Y2 - 10 October 1999 through 15 October 1999

ER -

Enlargement of SiC single crystal: Enhancement of lateral growth using tapered graphite lid

Abstract

All Science Journal Classification (ASJC) codes

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