Enhancement of remanent polarization of BIT-based thin films by Ti-site substitution using ions with higher charge valences

Hiroshi Uchida, Isao Okada, Hirofumi Matsuda, Takashi Iijima, Takayuki Watanabe, Hiroshi Funakubo

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

The enhancement of remanent polarization of bismuth titanate (Bi4Ti3O12; BIT)-based thin films by Ti-site substitution using ions with higher charge valences was discussed. It was found that charge-compensative ion substitution using higher-valent ions than that Ti4+ enhanced the Pr value of BIT and BLnT films without change in the Ec value. The analysis showed that ion substitution by the higher-valent cations lowered the leakage current of BIT film.

Original languageEnglish
Pages (from-to)87-99
Number of pages13
JournalMaterials Research Society Symposium - Proceedings
Volume748
Publication statusPublished - 2003
Externally publishedYes
EventFerroelectric Thin Films XI - Boston, MA, United States
Duration: Dec 2 2002Dec 5 2002

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • General Materials Science

Fingerprint

Dive into the research topics of 'Enhancement of remanent polarization of BIT-based thin films by Ti-site substitution using ions with higher charge valences'. Together they form a unique fingerprint.

Cite this