Enhancement of photoresponse properties of β-FeSi2/Si heterojunctions by Al doping

Yoshihito Maeda, Yoshikazu Terai, Masaru Itakura

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29 Citations (Scopus)


We have succeeded in enhancing the photovoltaic properties of p-n heterojunctions using β-FeSi2/Si(1 0 0) by doping Al into β-FeSi2. Raman spectroscopy, Rutherford backscattering spectroscopy (RBS) and transmission electron microscope (TEM) observations revealed that Al doping contributes to the synthesis of a less defective interface and epitaxial growth of β-FeSi2 on Si(1 0 0). This feature of epitaxial growth may reduce the recombination rate of electron-hole pairs near the depletion region, such that the photoresponse can be enhanced. We observed a significant photoelectric response corresponding to the interband transition near the band-gap energy of β-FeSi2. This effect of the Al doping can be used in IR-photoelectric cells.

Original languageEnglish
Pages (from-to)920-924
Number of pages5
JournalOptical Materials
Issue number5
Publication statusPublished - Feb 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering


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