Enhancement of metal-induced crystallization in Ge/Si/Ni/SiO2 layered structure

Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


Influences of crystallinity in the precursor on metal-induced lateral crystallization of a-Si on SiO2 have been investigated. It was found that the growth velocity during low temperature annealing (approx. 550 °C) could be enhanced by the pre-annealing treatment (300̃600 °C). This result triggered off the idea of MILC in multi-layered structure, i.e. a-Ge/a-Si/Ni-pattern/SiO2. Utilization of this structure successfully enhanced MILC growth velocity. This is because crystal nucleation initiated in a-Ge modulated crystallinity in the precursor (a-Si). As a result, poly-Si with large grains (approx. 10 μm) was achieved in a short time annealing (<5 h). This will be a powerful tool to realize large poly-Si layers on insulating films for high efficiency solar cells and system-in-displays.

Original languageEnglish
Pages (from-to)324-327
Number of pages4
JournalThin Solid Films
Publication statusPublished - Mar 22 2004
EventProceedings of Symposium D on Thin Film and Nano-Structured - Strasbourg, France
Duration: Jun 10 2003Jun 13 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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