Enhancement of magnetoresistance by ultra-thin Zn wstite layer

Yoshihiko Fuji; Michiko Hara; Hiromi Yuasa; Shuichi Murakami; Hideaki Fukuzawa

doi:10.1063/1.3644470

Enhancement of magnetoresistance by ultra-thin Zn wstite layer

Yoshihiko Fuji, Michiko Hara, Hiromi Yuasa, Shuichi Murakami, Hideaki Fukuzawa

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We have investigated a hybrid magnetic material composed of ultra-thin oxide spin-filtering layer/ferromagnetic layer (FML) for magnetoresistance (MR) enhancement. Using Zn-Fe oxide/Fe₅₀Co₅₀ as a free layer in current-perpendicular-to-plane giant magnetoresistive films, the MR ratio and ΔRA (the change of resistance area product) were enhanced to 26.0% and 52 mΩ μm² at a small RA (resistance area product) of about 0.2 Ω μm², respectively. Structural analysis revealed that the Zn wstite structure is responsible for the enhancement of the MR ratio, and spin-polarization of wstite/FML is higher than that of spinel ferrite/FML.

Original language	English
Article number	132103
Journal	Applied Physics Letters
Volume	99
Issue number	13
DOIs	https://doi.org/10.1063/1.3644470
Publication status	Published - Sept 26 2011
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Enhancement of magnetoresistance by ultra-thin Zn wstite layer",

abstract = "We have investigated a hybrid magnetic material composed of ultra-thin oxide spin-filtering layer/ferromagnetic layer (FML) for magnetoresistance (MR) enhancement. Using Zn-Fe oxide/Fe50Co50 as a free layer in current-perpendicular-to-plane giant magnetoresistive films, the MR ratio and ΔRA (the change of resistance area product) were enhanced to 26.0% and 52 mΩ μm2 at a small RA (resistance area product) of about 0.2 Ω μm2, respectively. Structural analysis revealed that the Zn wstite structure is responsible for the enhancement of the MR ratio, and spin-polarization of wstite/FML is higher than that of spinel ferrite/FML.",

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T1 - Enhancement of magnetoresistance by ultra-thin Zn wstite layer

AU - Fuji, Yoshihiko

AU - Hara, Michiko

AU - Yuasa, Hiromi

AU - Murakami, Shuichi

AU - Fukuzawa, Hideaki

PY - 2011/9/26

Y1 - 2011/9/26

N2 - We have investigated a hybrid magnetic material composed of ultra-thin oxide spin-filtering layer/ferromagnetic layer (FML) for magnetoresistance (MR) enhancement. Using Zn-Fe oxide/Fe50Co50 as a free layer in current-perpendicular-to-plane giant magnetoresistive films, the MR ratio and ΔRA (the change of resistance area product) were enhanced to 26.0% and 52 mΩ μm2 at a small RA (resistance area product) of about 0.2 Ω μm2, respectively. Structural analysis revealed that the Zn wstite structure is responsible for the enhancement of the MR ratio, and spin-polarization of wstite/FML is higher than that of spinel ferrite/FML.

AB - We have investigated a hybrid magnetic material composed of ultra-thin oxide spin-filtering layer/ferromagnetic layer (FML) for magnetoresistance (MR) enhancement. Using Zn-Fe oxide/Fe50Co50 as a free layer in current-perpendicular-to-plane giant magnetoresistive films, the MR ratio and ΔRA (the change of resistance area product) were enhanced to 26.0% and 52 mΩ μm2 at a small RA (resistance area product) of about 0.2 Ω μm2, respectively. Structural analysis revealed that the Zn wstite structure is responsible for the enhancement of the MR ratio, and spin-polarization of wstite/FML is higher than that of spinel ferrite/FML.

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Enhancement of magnetoresistance by ultra-thin Zn wstite layer

Abstract

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