Enhancement of bulk nucleation in a-Si1-xGex on SiO2 for low-temperature solid-phase crystallization

T. Sadoh, I. Tsunoda, T. Nagata, A. Kenjo, M. Miyao

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)


Nucleation phenomena in a-Si1-xGex films on SiO2 were examined in order to achieve low-temperature solid-phase crystallization. First, film thickness dependence of nucleation was investigated. The nucleation frequency per unit area increased with increasing film thickness, which was attributed to that bulk nucleation was dominant compared with interface or surface nucleation. Next, in order to enhance bulk nucleation in thin films, effects of the initial amorphicity modulation induced by Ar+ irradiation (25 keV, 1×1016 cm-2) before annealing were investigated. The incubation time for nucleation in pre-irradiated samples during subsequent annealing at 600 °C was significantly decreased to 1/20 of that without pre-irradiation, which was tentatively assigned to enhancement of atomic arrangement induced by densification of a-Si1-xGex films. It is expected that optimization of the irradiation conditions will realize low-temperature (<500 °C) formation of poly-Si1-xGex films on SiO2.

Original languageEnglish
Pages (from-to)96-100
Number of pages5
JournalThin Solid Films
Issue number1-2
Publication statusPublished - Mar 3 2003
EventE-MRS, K - Strasbourg, France
Duration: Jun 18 2003Jun 21 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


Dive into the research topics of 'Enhancement of bulk nucleation in a-Si1-xGex on SiO2 for low-temperature solid-phase crystallization'. Together they form a unique fingerprint.

Cite this