Enhanced stress relaxation in ultrathin SiGe-on-insulator by H+ -implantation-assisted oxidation

T. Sadoh, R. Matsuura, M. Miyao, M. Ninomiya, M. Nakamae, T. Enokida

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15 Citations (Scopus)


Effects of H+ implantation (≤5× 1016 cm-2) on stress relaxation in an oxidation-induced Ge condensation method have been investigated to form stress-relaxed ultrathin (~30 nm) SiGe-on-insulator (SGOI) virtual substrates. High-dose (≤ 1015 cm-2) implantation enhanced stress relaxation, which was attributed to bond breaking at the SiGeburied SiO2 interface. However, oxidation velocity was also enhanced due to irradiation defects. Two-step annealing (500 °C for 30 min and 850 °C for 60 min) before oxidation was proposed to remove irradiation defects. This achieved enhanced stress relaxation in ultrathin SGOI without changing oxidation velocity.

Original languageEnglish
Article number211901
Pages (from-to)1-13
Number of pages13
JournalApplied Physics Letters
Issue number21
Publication statusPublished - May 23 2005

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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