Effects of Ar+ ion-irradiation on solid-phase growth of β-FeSi2 have been investigated. Fe (10 nm)/Si structures were irradiated with 20 keV Ar+ (5.0 × 1015 cm-2) at room temperature (RT) or 400 °C, and subsequently annealed at 800 °C. The results of X-ray diffraction measurements suggested that the formation of β-FeSi2 for the sample irradiated at RT was faster than that irradiated at 400 °C. However, Auger electron spectroscopy measurements showed that atomic mixing at the Fe/Si interface before annealing was larger for the sample irradiated at 400 °C. These results suggested that amorphization of the Si substrate, in addition to atomic mixing at the Fe/Si interface, enhanced formation of β-FeSi2, which was attributed to atomic rearrangement induced during defect relaxation in annealing process.
|Number of pages||4|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - May 2003|
|Event||13th International conference on Ion beam modification of Mate - Kobe, Japan|
Duration: Sept 1 2002 → Sept 6 2002
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics