TY - JOUR
T1 - Enhanced solid-phase growth of β-FeSi2 by pre-amorphization
AU - Murakami, Y.
AU - Tsunoda, I.
AU - Kido, H.
AU - Kenjo, A.
AU - Sadoh, T.
AU - Miyao, M.
AU - Yoshitake, T.
N1 - Funding Information:
We are very grateful to Prof. Y. Maeda for valuable discussions. A part of this work was supported by the Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.
PY - 2003/5
Y1 - 2003/5
N2 - Effects of Ar+ ion-irradiation on solid-phase growth of β-FeSi2 have been investigated. Fe (10 nm)/Si structures were irradiated with 20 keV Ar+ (5.0 × 1015 cm-2) at room temperature (RT) or 400 °C, and subsequently annealed at 800 °C. The results of X-ray diffraction measurements suggested that the formation of β-FeSi2 for the sample irradiated at RT was faster than that irradiated at 400 °C. However, Auger electron spectroscopy measurements showed that atomic mixing at the Fe/Si interface before annealing was larger for the sample irradiated at 400 °C. These results suggested that amorphization of the Si substrate, in addition to atomic mixing at the Fe/Si interface, enhanced formation of β-FeSi2, which was attributed to atomic rearrangement induced during defect relaxation in annealing process.
AB - Effects of Ar+ ion-irradiation on solid-phase growth of β-FeSi2 have been investigated. Fe (10 nm)/Si structures were irradiated with 20 keV Ar+ (5.0 × 1015 cm-2) at room temperature (RT) or 400 °C, and subsequently annealed at 800 °C. The results of X-ray diffraction measurements suggested that the formation of β-FeSi2 for the sample irradiated at RT was faster than that irradiated at 400 °C. However, Auger electron spectroscopy measurements showed that atomic mixing at the Fe/Si interface before annealing was larger for the sample irradiated at 400 °C. These results suggested that amorphization of the Si substrate, in addition to atomic mixing at the Fe/Si interface, enhanced formation of β-FeSi2, which was attributed to atomic rearrangement induced during defect relaxation in annealing process.
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U2 - 10.1016/S0168-583X(03)00750-X
DO - 10.1016/S0168-583X(03)00750-X
M3 - Conference article
AN - SCOPUS:0038243540
SN - 0168-583X
VL - 206
SP - 304
EP - 307
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
T2 - 13th International conference on Ion beam modification of Mate
Y2 - 1 September 2002 through 6 September 2002
ER -