Enhanced performance of organic light-emitting diodes by inserting wide-energy-gap interlayer between hole-transport layer and light-emitting layer

Yusuke Honda; Toshinori Matsushima; Hideyuki Murata

doi:10.1016/j.tsf.2009.07.016

Enhanced performance of organic light-emitting diodes by inserting wide-energy-gap interlayer between hole-transport layer and light-emitting layer

Yusuke Honda, Toshinori Matsushima, Hideyuki Murata

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We demonstrated that driving voltages, external quantum efficiencies, and power conversion efficiencies of organic light-emitting diodes (OLEDs) are improved by inserting a wide-energy-gap interlayer of (4,4′-N,N′-dicarbazole)biphenyl (CBP) between a hole-transport layer of N,N-di(naphthalen-1-yl)-N,N′-diphenyl-benzidine (α-NPD) and a light-emitting layer of tris(8-hydroxyquinoline)aluminum. By optimization of CBP thicknesses, the device with a 3-nm-thick CBP layer had the lowest driving voltage and the highest power conversion efficiency among the OLEDs. We attributed these improvements to enhancement of a carrier recombination efficiency and suppression of exciton-polaron annihilation. Moreover, we found that the degradation of the OLEDs is caused by decomposition of CBP molecules and excited-state α-NPD molecules.

Original language	English
Pages (from-to)	545-547
Number of pages	3
Journal	Thin Solid Films
Volume	518
Issue number	2
DOIs	https://doi.org/10.1016/j.tsf.2009.07.016
Publication status	Published - Nov 30 2009
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Metals and Alloys
Materials Chemistry
Surfaces, Coatings and Films
Surfaces and Interfaces

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10.1016/j.tsf.2009.07.016

Cite this

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title = "Enhanced performance of organic light-emitting diodes by inserting wide-energy-gap interlayer between hole-transport layer and light-emitting layer",

abstract = "We demonstrated that driving voltages, external quantum efficiencies, and power conversion efficiencies of organic light-emitting diodes (OLEDs) are improved by inserting a wide-energy-gap interlayer of (4,4′-N,N′-dicarbazole)biphenyl (CBP) between a hole-transport layer of N,N-di(naphthalen-1-yl)-N,N′-diphenyl-benzidine (α-NPD) and a light-emitting layer of tris(8-hydroxyquinoline)aluminum. By optimization of CBP thicknesses, the device with a 3-nm-thick CBP layer had the lowest driving voltage and the highest power conversion efficiency among the OLEDs. We attributed these improvements to enhancement of a carrier recombination efficiency and suppression of exciton-polaron annihilation. Moreover, we found that the degradation of the OLEDs is caused by decomposition of CBP molecules and excited-state α-NPD molecules.",

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AU - Matsushima, Toshinori

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N2 - We demonstrated that driving voltages, external quantum efficiencies, and power conversion efficiencies of organic light-emitting diodes (OLEDs) are improved by inserting a wide-energy-gap interlayer of (4,4′-N,N′-dicarbazole)biphenyl (CBP) between a hole-transport layer of N,N-di(naphthalen-1-yl)-N,N′-diphenyl-benzidine (α-NPD) and a light-emitting layer of tris(8-hydroxyquinoline)aluminum. By optimization of CBP thicknesses, the device with a 3-nm-thick CBP layer had the lowest driving voltage and the highest power conversion efficiency among the OLEDs. We attributed these improvements to enhancement of a carrier recombination efficiency and suppression of exciton-polaron annihilation. Moreover, we found that the degradation of the OLEDs is caused by decomposition of CBP molecules and excited-state α-NPD molecules.

AB - We demonstrated that driving voltages, external quantum efficiencies, and power conversion efficiencies of organic light-emitting diodes (OLEDs) are improved by inserting a wide-energy-gap interlayer of (4,4′-N,N′-dicarbazole)biphenyl (CBP) between a hole-transport layer of N,N-di(naphthalen-1-yl)-N,N′-diphenyl-benzidine (α-NPD) and a light-emitting layer of tris(8-hydroxyquinoline)aluminum. By optimization of CBP thicknesses, the device with a 3-nm-thick CBP layer had the lowest driving voltage and the highest power conversion efficiency among the OLEDs. We attributed these improvements to enhancement of a carrier recombination efficiency and suppression of exciton-polaron annihilation. Moreover, we found that the degradation of the OLEDs is caused by decomposition of CBP molecules and excited-state α-NPD molecules.

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Enhanced performance of organic light-emitting diodes by inserting wide-energy-gap interlayer between hole-transport layer and light-emitting layer

Abstract

All Science Journal Classification (ASJC) codes

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