TY - JOUR
T1 - Enhanced performance of near-infrared photodetectors based on InGaAs nanowires enabled by a two-step growth method
AU - Zhang, Heng
AU - Wang, Wei
AU - Yip, Senpo
AU - Li, Dapan
AU - Li, Fangzhou
AU - Lan, Changyong
AU - Wang, Fei
AU - Liu, Chuntai
AU - Ho, Johnny C.
N1 - Funding Information:
The authors acknowledge the financial support from the General Research Fund (CityU 11211317) and the Theme-based Research (T42-103/16-N) of the Research Grants Council of Hong Kong SAR, China, the National Natural Science Foundation of China (Grant No. 51672229) and the Science Technology and Innovation Committee of Shenzhen Municipality (Grant JCYJ20170818095520778).
Publisher Copyright:
© The Royal Society of Chemistry.
PY - 2020/12/21
Y1 - 2020/12/21
N2 - Because of the tunable bandgap, high carrier mobility and strong interaction with light, ternary III-V nanowires (NWs) have been demonstrated with tremendous potential for advanced electronics and optoelectronics. However, their further performance enhancement and practical implementation are still a challenge in the presence of kinked morphology and surface coating of the nanowires. Here, we report the development of high-performance near-infrared photodetectors based on high-quality InGaAs nanowires enabled by the two-step chemical vapor deposition method. Importantly, the optimized In0.51Ga0.49As NW devices exhibit excellent photodetector performance at room temperature, with a responsivity of 7300 A W-1, a specific detectivity of 4.2 × 1010 Jones and an external quantum efficiency of 5.84 × 106% under 1550 nm irradiation. The rise and decay time constants are as efficient as 480 μs and 810 μs, respectively, constituting a record high performance among all arsenide-based nanowire photodetectors. Large-scale NW parallel-arrayed devices are also fabricated to illustrate their promising potential for next-generation ultrafast high-responsivity near-infrared photodetectors.
AB - Because of the tunable bandgap, high carrier mobility and strong interaction with light, ternary III-V nanowires (NWs) have been demonstrated with tremendous potential for advanced electronics and optoelectronics. However, their further performance enhancement and practical implementation are still a challenge in the presence of kinked morphology and surface coating of the nanowires. Here, we report the development of high-performance near-infrared photodetectors based on high-quality InGaAs nanowires enabled by the two-step chemical vapor deposition method. Importantly, the optimized In0.51Ga0.49As NW devices exhibit excellent photodetector performance at room temperature, with a responsivity of 7300 A W-1, a specific detectivity of 4.2 × 1010 Jones and an external quantum efficiency of 5.84 × 106% under 1550 nm irradiation. The rise and decay time constants are as efficient as 480 μs and 810 μs, respectively, constituting a record high performance among all arsenide-based nanowire photodetectors. Large-scale NW parallel-arrayed devices are also fabricated to illustrate their promising potential for next-generation ultrafast high-responsivity near-infrared photodetectors.
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U2 - 10.1039/d0tc04330c
DO - 10.1039/d0tc04330c
M3 - Article
AN - SCOPUS:85098130645
SN - 2050-7534
VL - 8
SP - 17025
EP - 17033
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
IS - 47
ER -